The present invention describes the production of 3D charge trap memory cell method comprising equipment and systems, together with the 3D charge trap memory cell. 在由导电及绝缘材料交替层形成的平面堆叠中,可形成大致垂直开口. In the plane by stacking alternating layers of conducting and insulating ...
and David Wei Zhang, and co-workers, by combining two-dimensional material WSe2 and a three-dimensional Al2O3/HfO2/Al2O3 charge-trap stack, a charge-trap memory without a fatal overerase issue is achieved. State of the art values for flash memory based on two-dimensional materials are ...
ACharge-TrapMemoryDevicewithaComposition-ModulatedZr-SilicateHigh-kDielectric CHIN.PHYS.LETT.Vo1.27,No.6(2010)068502ACharge--TrapMemoryDevicewithaComposition--ModulatedZr.-SilicateHigh-kDielectricMultilayerStructureLVShi—Cheng(仕成),GEZhong-Yang(葛钟阳),ZHOUYue(~越),XUBo(徐波),GAOLi—Gang(高立刚),...
Hu, “Charge-trap memory device fabricated by oxidation of Si1-xGex”, IEEE Trans. Electron Devices 48, 696 (2001). :Ya-Chin King, Tsu-Jae King, Chenming Hu, “Charge-Trap Memory Device Fabricated by Oxidation of Si1-xGex”, IEEE Transactions on Electron Devices, vol. 48, NO.4, ...
Graphene-based non-volatile charge-trap memory devices were fabricated and characterized to investigate the implementation effect of both 2-dimensional graphene and the 3-dimensional memory structure. The single-layer-graphene (SLG) channel devices exhibit larger memory windows compared to the multi-...
charge trap flash memory:电荷捕获闪存闪存,存储,电荷,Trap,Flash,电荷捕获,flash,trap,电荷捕捉 文档格式: .pdf 文档大小: 1.23M 文档页数: 7页 顶/踩数: 0/0 收藏人数: 2 评论次数: 0 文档热度: 文档分类: 论文--毕业论文 文档标签: 闪存存储电荷TrapFlash电荷捕获flashtrap电荷捕捉 ...
A nonvolatile charge trap memory device is described. The device includes a substrate having a channel region. A gate stack is disposed above the substrate over the channel region. The gate stack incl
Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties. Lee, F. Caruso, Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties. Nat. Nanotechnol. 2, 790-795 (2007)...
A charge trap flash memory device and method of making same are provided. The device includes: a tunnel insulating layer, a charge trap layer; a blocking insulating layer; and a gate electrode sequentially formed on a substrate. The charge trap layer includes: plural trap layers comprising a ...
memory card and system including the same 发明人：Zong-liang Huo,In-seok Yeo,Seung-Hyun Lim,Kyong-hee Joo,Jun-kyu Yang 申请号：US12080315 申请日：20080402 公开号：US20080246078A1 公开日：20081009 专利内容由知识产权出版社提供 专利附图：摘要：A charge trap flash memory device and method of ...