通常有两种存储器,一个是嵌入式的静态随机存储器(SRAM),另一个是嵌入式动态随机存储器(DRAM)。SRAM有着很高的运行速度,但是SRAM的存储单元是由六个晶体管组成的,在大规模集成电路中SRAM存储阵列将会占据很大的面积。此外SRAM存储单元中晶体管需要相互匹配,这样就会导致SRAM很难按比例缩小。由一个晶体管和一个电容组...
The simplicity of the cell structure also makes it extremely scalable and cost effective. The challenges of using this cell to satisfy the requirement of embedded SRAM are high-frequency operation, short latency, transparent refresh and soft-error rate. The use of multi-bank architecture and the ...
对大容量的高速低功耗嵌入式存储器的需求不断增加。通常有两种存储器,一个是嵌入式的静态随机存储器(SRAM),另一个是嵌入式动态随机存储器(DRAM)。SRAM有着很高的运行速度,但是SRAM的存储单元是由六个晶体管组成的,在大规模集成电路中SRAM存储阵列将会占据很大的面积。此外SRAM存储单元中晶体管需要相互匹配,这样就会...
About 1T-SRAM Available in densities up to 128Mbits, MoSys' patented 1T-SRAM technology uses a single transistor cell to achieve its exceptional density while maintaining the refresh-free interface and low latency random memory access cycle time associated with traditional six-transistor SRAM cells...
About 1T-SRAM Available in densities up to 128Mbits, MoSys' patented 1T-SRAM technology uses a single transistor cell to achieve its exceptional density while maintaining the refresh-free interface and low latency random memory access cycle time associated with traditional six-transistor SRAM cells...
晟矽微推出的MC51F003A4是一款高速低功耗1T周期8051内核8位增强型FLASH微控制器芯片,较传统8051相比,运行效率高。MC51F003A4的最高运行频率为16MHz,片上集成了16K字节FLASH ROM、1024字节EEPROM和512字节SRAM(256字节内部RAM加256字节外部RAM),内置1个高频RC振荡器和1个低频RC振荡器以及预留了1个外部32768Hz晶体...
(64 KB + 32 KB dedicated to HSM) • 488 KB on-chip general-purpose SRAM: – 2× 32 KB instruction TCM + 2× 64 KB data TCM – 256 KB system RAM – 40 KB HSM dedicated system RAM Security: hardware security module (HSM) • Cybersecurity ISO/SAE 21434 compliance (refer to the...
(64 KB + 32 KB dedicated to HSM) • 488 KB on-chip general-purpose SRAM: – 2× 32 KB instruction TCM + 2× 64 KB data TCM – 256 KB system RAM – 40 KB HSM dedicated system RAM Security: hardware security module (HSM) • Cybersecurity ISO/SAE 21434 compliance (refer to the...
1. PLD Macro-cell outputs 2. PLD inputs 3. Latched Address Out (A0-A7) 1. PLD Macro-cell outputs 2. PLD inputs 3. SRAM stand by voltage input (VSTBY) 4. JTAG Interface (TDI, TDO, TMS, TCK, TSTAT, TERR) PC7-PC0 I/O General I/O port pins 5. SRAM batter...
1. PLD Macro-cell outputs 2. PLD inputs 3. SRAM stand by voltage input (VSTBY) 4. JTAG Interface (TDI, TDO, TMS, TCK, TSTAT, TERR) PC7-PC0 I/O General I/O port pins 5. SRAM battery-on indicator (PC4) 1. PLD I/O PD2-PD1 I/O General I/O port pin ...