Interlayer excitons (ILEs) involving an electron and a hole situated in separate adjacent layers are pronounced intype-IITMD-based heterobilayers. Tebyetekerwa etal. report a high twist-angle-dependent energy shift of the ILE emission peak in MoS2/WS2heterobilayers for different samples investigated ...
The optical excitation of the MoS2/WS2 heterostructure can lead to a tightly bound interlayer exciton with the electron (e−) in MoS2 and the hole (h+) in WS2 (refs 19, 25). The efficient charge transfer in the MoS2/WS2 heterostructure is confirmed by the photoluminescence (PL) ...
Ultrafast formation of interlayer hot excitons in atomically thin MoS2/WS2 heterostructures Article Open access 19 August 2016 Interlayer exciton dynamics in van der Waals heterostructures Article Open access 28 February 2019 Spontaneous-polarization-induced photovoltaic effect in rhombohedrally stacked ...
Yu, Y. et al. Equally efficient interlayer exciton relaxation and improved absorption in epitaxial and nonepitaxial MoS2/WS2heterostructures.Nano Lett.15, 486–491 (2015). ArticleADSCASGoogle Scholar Rigosi, A. F., Hill, H. M., Li, Y., Chernikov, A. & Heinz, T. F. Probing interlaye...
Tuning interlayer coupling in large-area heterostructures with CVD-grown MoS2 and WS2 monolayers. Nano Lett, 2014, 14: 3185–3190 44 Lei T, Lv W, Lv W, et al. High detectivity and responsivity in black phosphorus/SnS2 heterostructure with broken-gap energy band align- ment. Jpn J Appl ...
23,37. In addition, for MoS2/WS2 with θ≈ 1.8° and MoSe2/WSe2 with θ≈ 2.4° the energy profile for interlayer interband exciton resembles an antidot superlattice more than an array of QDs. This contrasts with the persistence up to θ ~ 3.5° of shallow QD arrays for both ...
Probing Interlayer Interactions in Transition Metal Dichalcogenide Heterostructures by Optical Spectroscopy: MoS2/WS2 and MoSe2/WSe2 We have applied optical absorption spectroscopy to investigate van der Waals heterostructures formed of pairs of monolayer transition metal dichalcogenide ... AF Rigosi,HM Hill...
Twist-driven wide freedom of indirect interlayer exciton emission in MoS2/WS2 heterobilayers Interlayer excitons (ILEs) involving an electron and a hole situated in separate adjacent layers are pronounced intype-IITMD-based heterobilayers. Tebyetek... M Tebyetekerwa,J Zhang,S Saji,... 被引量: ...
Moreover, the electronic structure changing process with interlayer spacing of MoS2-WS2, MoS2-WSe2, and WS2-WSe2 is different from each other. With the help of variable-temperature spectral experiment, different electronic transition properties of MoS2-WS2, MoS2-WSe2, and WS2-WSe2 have been ...
but the conduction-band offset is small between WS2and MoSe2(middle panels of Fig.1b). Therefore interlayer electron tunneling is expected between states of the same spin and valley, which leads to hybridization between the corresponding intra- and interlayer exciton transitions that share the same...