More importantly, through optimizing the growth conditions, ternary WS2(1–x)Se2x nanotubes were synthesized and the composition of S and Se can be systematically controlled. The as-grown WS2(1–x)Se2x nanotubes on carbon fibers, assembled as a working electrode, revealing low overpotential, ...
有鉴于此,近日,韩国高丽大学Chul-Ho Lee和Donghun Lee(共同通讯作者)等报道了使用金属有机化学气相沉积技术,实现了具有连续可调带隙的成分调制WS2xSe2(1-x)合金的晶圆级均匀生长。良好优化的生长可以在整个晶圆上实现具有优良均匀性的单层薄膜。通过改变金属-有机前驱体的流动速率,WS2xSe2(1-x)合金中的取代原子(...
分子式:1 产地:1 包装规格:1 品牌:1 货号:1 别名:1 供应CVD-少层BN薄膜硅基单层BN薄膜|CVD-MoS2xSe2(1-x)合金单晶/WS2-WSe2面内异质结 现货供应: WS2/WSe2异质结 CVD-三维BN泡沫 B相二氧化钒VO2单晶薄膜 CVD-少层BN薄膜硅基单层BN薄膜
包装规格:1 货号:1 别名:1 供应CVD-WSe2 三角形单晶(CVD-MoSe2/CVD-WS2/CVD-MOS2/多层数BN薄膜 现货供应: CVD-MOS2 三角形单晶B相二氧化钒VO2单晶薄膜 CVD-WS2三角形单晶CVD-少层BN薄膜硅基单层BN薄膜 CVD-MoSe2三角形单晶CVD-MoS2xSe2(1-x)合金单晶 ...
采用水热法制备得到WS 2/RGO 复合材料。裴永永等[21]采用水热法，以WS 2纳米粉末和SnCl 4·5H 2O 为原料，制得了WS 2-SnO 2纳米材料。1.2 溶剂热法 溶剂热法是在水热法的基础上发展起来的，是指在密闭体系中，以有机物或非水溶媒为溶剂，在一定的温度和溶液的自生压力下进行合成反应。该方 ...
Furthermore, the peaks at 54.7 and 55.8 eV can be assigned to Se 3d5/2 and Se 3d3/2, respectively, confirming the formation of Se2− [33]. Sequentially, TEM measurements were performed to investi- gate the microstructure of WSe2. Fig. 1d shows the low-magni- fication TEM image of...
In In this the 1st step, process, we the first PCF is cut the feinlldedfawceithofWthSe2 nanosheets solution by PCF by an optical fiber high-pressure injection method. cleaver, and then put this end of the PCF location tiingthotltyhetoinajveocitdorthweithleaWkaSg2enoafnososhlueteiotsnso...
(hePSe2oM-feWoxdS2ceS)is,2tcoWhrniebSitc--2 ptrreeasanoknsiPatniMoc,netshaotefaPbMLoouspSt 2e2c (ePtVrMacocoSa2r)nr,ebWsepSod2ne(dcPosWntovS2ot)hl,ueatneBddeiixnncttioetortlnha,yrweeerhmeicxhacjiaottortnrpibe(aPukthesetsewrtooh)etahnreethtfoietptteeodmf wvpaieltrehanttcuhere-ebi...
6. dLHiioc, hnDag.l,ceXot g.aeeln.t Uiadlle.tsrU:af2ltaHrsat-fMpasutXlsc2ehsageremgneiecrtoarnatidnousnfcetwroiritnsh(abMtloa m=ck i Mcpaohll,oyWstph;hiXnor =Mus S o.,SaS2r/eXW,ivTSe2p)rh.ePepthreiyrnsot.sRatrreuXvc.itvBu:1r8e55s0.,5N.003a03t4.38N005a...
In order to study the impact of back-transferred and top-transferred p-n junction, p-n junction was also fabricated by using tions dtyepmeoCnsftirlmate, dWlSe2akgarogewcnudrirreencttldyeonnsinti-eGs oaNf 1..A15s mshAow/cnmi2naFnidg.2 59,.6th μeAI/-cVmc2uartve−s1...