1. 效应 ...有足够精度.本文以实例说明,在空间域插值可消除折返效应(Wraparound effect).其效果与补零的作用相同,但是却不需要占用额 …www.cnki.com.cn|基于3个网页 例句 释义: 全部,效应 更多例句筛选 1. Secondly, further study is processed to allay the influence of "wraparound effect" brought in...
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The author´s style of writing is not a good word can bewraparound! 作者的文笔不是一个好字能概括的! 4. The effect of thewraparoundand the sawtooth are found during the simulations. 模拟过程中,粒子出现了包裹效应和不同于宏观现象的锯齿效应。
WRAP-AROUND TYPE GATE FIELD EFFECT TRANSISTORPROBLEM TO BE SOLVED: To provide a gate formation method capable of controlling the gate length of a self-aligned wrap-around type field effect transistor easily, accurately, and securely.FURUKAWA TOSHIHARU...
双星是一个由彼此环绕的两个星组成的系统。 权威例句 Wrap-around The N-terminal arms of lambda repressor wrap around the operator DNA. Segmentation of a wrap-around model using an active contour Wire-channel and wrap-around-gate metal–oxide–semiconductor field-effect transistors with a significant...
4. The effect of thewraparoundand the sawtooth are found during the simulations. 模拟过程中,粒子出现了包裹效应和不同于宏观现象的锯齿效应。 youdao 5. Two centrally mounted exhaust pipes are integrated into thewraparoundlower rear panel.
bouclage, renouement automatique des mots, renouement des mots是“word wraparound"到 法文 的最佳翻译。 译文示例:"With the new Nanogun Airmix®, we noticed some really positive points, good maneuverability at the wrist thanks to its lightweight design, an optimal wraparound effect regarding ...
1) wraparound effect 周期性效果 1. Both absorbing boundary connection can overcome the so called ‘wraparound effect’ to some extent, the difference is mainly caused by their respective absorbing characters. 两种吸收边界对于周期性效果( wraparound)所带来的影响都有一定的抑制作用 ,吸收效果的差别主要...
“distant” edge pans into view, thus effectuating a wrap-around. The condition may be, for example, a threshold distance, speed, inertia, etc. Some embodiments provide a hint or visual “peek” of the “distant” edge as the “near” edge is being over-panned. Some embodiments snap ...
A field effect transistor is formed having wrap-around, vertically-aligned, dual gate electrodes. Starting with an silicon-on-insulator (SOI) structure having a buried silicon islan