Wide Bandgap Semiconductors (SiC/GaN) 宽禁带半导体(碳化硅/氮化镓) 宽禁带 (WBG) 半导体与传统半导体相比,差异明显,因为其具有更大的禁带。禁带是指半导体中价带顶部和导带底部之间的能量差。更大的距离使宽禁带半导体功率器件能够在更高的电压、温度和频率下工作。
wide bandgap semiconductorsSiCGaNohmic contactsdiffusion barriersPresented are the theoretical and experimental fundamentals of the fabrication of ohmic contacts to n- and ptype wide band gap semiconductors such as SiC and GaN. In particular, the Ni-Si/n-SiC, Al-Ti/p-SiC, Ti- Al/n-GaN and ...
Wide Bandgap Semiconductors (SiC/GaN) ワイドバンドギャップ半導体 ワイドバンドギャップ (WBG) 半導体はバンドギャップ値が大きく、従来の半導体とは大きく異なっています。バンドギャップとは、半導体の価電子帯上端と伝導帯下端の間のエネルギー差のことを示します。ワイドバンドギャップ...
Wide Bandgap Semiconductors 电子书 读后感 评分☆☆☆ 评分☆☆☆ 评分☆☆☆ 评分☆☆☆ 评分☆☆☆ 类似图书 点击查看全场最低价 出版者:Springer 作者:Sandhu, Adarsh 编 出品人: 页数:486 译者: 出版时间:2007-03-22 价格:USD 199.00 装帧:Hardcover...
Wide-bandgap semiconductors have a long and illustrious history, starting with the first paper on SiC light-emitting diodes published in 1907. In the last few years, however, interest in wide-bandgap semiconductors has skyrocketed. Improved material quality, important breakthroughs both in SiC and Ga...
New Applications for Wide-Bandgap Semiconductors Wide-bandgap semiconductors such as SiC, GaN and related alloys, BN and related alloys, ZnGeSiN2, ZnO, and others continue to find new applications in solid-state lighting, sensors, filters, high-power electronics, biological detection, ... JI Chy...
Control of Spin Defects in Wide-Bandgap Semiconductors for Quantum Technologies Deep-level defects are usually considered undesirable in semiconductors as they typically interfere with the performance of present-day electronic and opto... FJ Heremans,CG Yale,DD Awschalom - 《Proceedings of the IEEE》...
Properties of wide bandgap II-VI semiconductors edited by Rameshwar Bhargava (EMIS datareviews series, no. 17) INSPEC, Institution of Electrical Engineers, c1997 R Bhargava - INSPEC, Institution of Electrical Engineers 被引量: 187发表: 1997年 Properties of wide bandgap II-VI semiconductors This tw...
Wide Bandgap Semiconductors : Fundamental Properties and Modern Photonic and Electronic Devices | Clc Wide bandgap semiconductors: fundamental properties and modern photonic and electronic devices. Springer. p. 357.K. Takahashi, A. Yoshikawa, and A. Sandhu... 被引量: 0发表: 0年 ...
(MosFETs, HEMTs, MesFETs, JFETs, or BJTs), which started to find their way into demonstration boards and demonstrated the indisputable advantages wide bandgap (WBG) materials bring to the table. Concerning power semiconductors, these comprise the extension of the operating temperature range, ...