A quantum dot (QD) sensitized wide bandgap (WBG) semiconductor heterojunction photovoltaic (PV) device comprises an electron conductive layer; an active photovoltaic (PV) layer adjacent the electron conductive layer; a hole conductive layer adjacent the active PV layer; and an electrode layer ...
Quantum Dot Spectral Tuning of Multijunction III-V Solar Cells Embedding InAs quantum dots (QDs) in a single junction GaAs solar cell can increase sub-GaAs bandgap photocurrent generation. This method has been shown ... C Bailey,S Hubbard,SJ Polly,... - 《Mrs Proceedings》 被引量: 2发表:...
II-VI Semiconductor Compounds || Optical Properties of Wide Bandgap II-VI Superlattices Jain,Mukesh 被引量: 0发表: 1993年 Self-organized growth, ripening, and optical properties of wide-bandgap II-VI quantum dots We discuss the formation of self-assembling II–VI quantum dots during MBE growth...
A Universal Method of Producing Transparent Electrodes Using Wide-Bandgap Materials A UV light-emitting diode (LED) is an eco-friendly optical source with diverse applications. However, currently, the external quantum efficiency (EQE) of A... Hee-Dong,Kim,Ho-Myoung,... - 《Advanced Functional ...
Accurate UV light detection is a crucial component in modern optoelectronic technologies. Current UV photodetectors are mainly based on wide-bandgap semiconductors (WBSs), such as III–V semiconductors. However, conventional WBSs have reached a bottlenec
Perovskite-based tandem solar cells have attracted increasing interest because of its great potential to surpass the Shockley–Queisser limit set for single-junction solar cells. In the tandem architectures, the wide-bandgap (WBG) perovskites act as the front absorber to offer higher open-circuit vol...
This approach is proposed to develop many types of wide–range–visible optical materials and to be applicable to many narrow and wide bandgap materials. For decades, photocatalysis as a green chemistry technology using sunlight has been attracting tremendous atten- tion. Photocatalysis can completely ...
The monolithic integration of wide-bandgap and narrow-bandgap semiconductors is of great interest, since it broadens the spectral absorption range of light-harvesting devices and photodetectors1,2,3,4. Additionally, the unique properties of each material in the integrated system can be synergistically ...
Conductors with Eg beyond these values, namely ultrawide-bandgap (UWBG) semiconductors, extend application fields to RF electronics, deep-UV optoelectronics, quantum devices and others66. Such materials (e.g., β-Ga2O3, diamond and AlGaN) would allow increasing the Schottky barrier height and/or...
Our model has important implications for potential photonic applications using feldspar, measurement of band tail width in wide bandgap materials, and understanding the EDE effect in other materials.Similar content being viewed by others Site-selective mapping of metastable states using electron-beam ...