power electronicspower packaginghigh temperaturehigh performancehigh frequencyreliabilityAPEI has developed high-performance electronics to exploit the unique capabilities of wide-bandgap devices. Crucial enabling features include high current density, fast switching speed, high-voltage (>10kV) blocking, high-...
The wide-bandgap power semiconductor devices market size is estimated to grow by USD 8.18 billion at a CAGR of 46.12% between 2023 and 2028. The market is experiencing significant growth, driven by the increasing demand for high-power density devices in various industries, including transportation,...
Infineon’s high efficiency wide bandgap semiconductor devices for power electronics product solutions are revolutionary. Our innovative and revolutionary technology implements high-performance wide band gap semiconductor materials and includes Infineon’s CoolSiC™. Moreover, our CoolGaN™ solution...
An advantage for some wide bandgap materials that is often overlooked is that the thermal coefficient of expansion (CTE) is better matched to the ceramics in use for electronic-packaging technology. The optimal choice for unipolar devices is GaN and the associated material system of GaN/AlGaN. Th...
Wide-bandgap power electronics for the More Electric Aircraft Developments in solid-state electronics have provided the United States Air Force with the most sophisticated and capable avionics systems in the world. St... KC Reinhardt,MA Marciniak - Energy Conversion Engineering Conference 被引量: 56...
In recent years, power semiconductor devices have been built with wide-bandgap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN). The use of these materials promises to surpass the limits imposed by Si. More compact and efficient devices can be fabricated with these materials. ...
Latest SJ-MOSFET Technology, Can It Still Compete with Wide Bandgap? Now both silicon carbide (SiC) and gallium nitride (GaN) products are having an impact in the marketplace, it is easy to think that there is no longer a place for silicon (Si) in power electronics. That the advant...
wide bandgap materials; power electronics; smart grids; distributed energy resources; technical requirements1. Introduction At present, climate change represents a threat not only to specific regions around the world but to the entire world ecosystem. Therefore, there is an urgent need to deal with ...
Wide bandgap semiconductors are of great interest for high power/high frequency applications implying power electronics63. Such materials also open the area of high-temperature electronics which is required in automotive, aerospace, and energy production industries64. Transistors based on these materials ...
SiC, on the other hand, with its higher thermal-conductivity and lower-frequency operation is more suited for higher-power applications including the higher-end voltages required in EVs and data centers, some solar-power designs, rail traction, wind turbines, grid distribution and industrial and me...