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Publication Date: 03/28/2013 Filing Date: 09/27/2011 Export Citation: Click for automatic bibliography generation Assignee: INFINEON TECHNOLOGIES AG International Classes: G06K19/077(IPC1-7):G06K19/077 Domestic Patent References: DE102006060719A1N/A2008-06-26 ...
Export Citation: Click for automatic bibliography generation Assignee: INFINEON TECHNOLOGIES AG (DE) International Classes: H01L23/40H01L23/32H01L23/42H01L23/427(IPC1-7):H01L23/04H01L23/42H01L23/427H01L23/32 Domestic Patent References: ...
The semiconductor module (100A) has a power semiconductor chip (101) e.g. MOSFET, with a contact element (102) on a main surface (103), and another contact element (104) on another main surface (105). A carrier (106) is arranged on the semiconductor chip such that the main surface ...
The method involves forming a vertical trench that extends from a horizontal main surface (15) into a semiconductor body (40). A dielectric layer is formed in the vertical groove. A conductive region is formed on the dielectric layer in the vertical trench such that the conductive region is ...
Surface electrodes (10) are connected to the layer (6) in such a manner that a lateral running series circuit of MOS diodes is formed. The electrodes lie partially directly on the layer (6). An independent claim is also included for a method for manufacturing a semiconductor component. ...