potential barrier across the junction and drift of the charge carriers reduces the thickness of the barrier. In normal thermal equilibrium condition and in absence of any external force, the diffusion of charge carrier is equal and opposite of drift of charge carriers hence the thickness of ...
Explain physically why the diffusion capacitance is not important in a reverse biased pn junction.Why does the potential barrier decrease in a forward-biased p-n junction?Why is electrical power transmitted at high voltage and transformed to low...
The depletion region of the emitter-base region is thin compared to the depletion region of the collector-base junction (Note that the depletion region is a region where no mobile charge carriers are present and it behaves like a barrier that opposes the flow of the current). In N-type emi...
we apply the voltage divider rule to determine the potential drop across an individual resistor. According to this rule, the potential drop across an individual resistor is equal to the ratio of the resistance of this resistor to the sum of all the resistors in seri...
barrier decreases gradually, when the applied voltage is greater than or equal to cut-in voltage, entire barrier is destructed and the electrons and holes are now free to cross the junction which then forms a closed circuit and enables the flow of current. Here we have explained theForward ...
Physical sunscreens (also known as sunblock or mineral sunscreens) work by literally shielding the skin with a physical barrier of product which bounces the sun’s ultraviolet rays away from the skin. They contain finely milled titanium dioxide or zinc oxide, and they used to come up quite cha...
In a no-bias state, a built-in potential (the energy difference between the lowest limit of the emitter's conduction band and the lowest limit of the base's conduction band) occurs at each pn junction due to the generation of a depletion layer, creating an energy barrier. The emitt...
In the 1950s and 1960s, the transistor underwent further evolution with the development of the bipolar junction transistor (BJT) and the field-effect transistor (FET)4. While the BJT, operating on a different principle, is also a three-layer device, the FET is a four-layer device that con...
What is the advantage of transmitting power at high voltages? Voltage: In electricity, the term voltage is defined as the potential difference that makes the electrical charge to move. It is also known as electric potential difference and expressed in units of volt. ...
Due to the flow of reverse current the width of the junction barrier increases. When this applied reverse bias voltage is increased gradually at a certain point a rapid increase in the reverse current can be observed. This is known as Junction breakdown. The corresponding applied reverse voltage...