A low-cost silicon-based high efficiency CMOS-LDMOS switch-mode power amplifier (SMPA) line-up operating for sub-1GHz application is presented. The switch-mode operated LDMOS device is driven by high-speed, high
(CMOS compatible) le No audible pop during standby operations so Diagnostic facilities: b– Clip detector O– Out to GND short circuit -– Out to VS short circuit t(s)– Soft short at turn-on – Thermal shutdown proximity uc Protection for rod– Output AC/DC short circuit –...
3.3 Other Features The device is provided with both standby and mute functions, independently driven by two CMOS logic compatible input pins. The circuits dedicated to the switching on and off of the amplifier have been carefully optimized to avoid any kind of uncontrolled audible transient at the...
A 400 to 500-MHz CMOS Power Amplifier with multi-Watt output 来自 学术范 喜欢 0 阅读量: 15 作者:J Jeon,WB Kuhn 会议名称: Radio and Wireless Symposium 主办单位: IEEE Press 收藏 引用 批量引用 报错 分享 全部来源 免费下载 求助全文 onacademic.com 学术范 学术范 (全网免费下载) ...
describes an electronic kilowatt power meter (KWH meter) which employs a minimum number of integral components and provides an output reading of kilowatt hours of electrical energy consumed by a facility being monitored. The present invention was devised to provide comparable compatible electronic circuit...
of 9V - 20V and Output in Phase with Input in a 8-Lead PDIP Package. The IRS2127/IRS2128/IRS21271/IRS21281 are high voltage, high speed power MOSFET and IGBT drivers. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible...
Wang, J.IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERSTsai, J.-H. and J.-W. Wang, "An X-band half-watt CMOS power amplifier using interweaved parallel combining transformer," IEEE Microw. Wireless Compon. Lett., Vol. 27, 491-493, 2017....
A 400 to 500-MHz CMOS Power Amplifier with multi-Watt outputdoi:10.1109/rws.2009.4957331Jeongmin JeonWilliam B. KuhnIEEE PressRadio and Wireless Symposium
Design of a Fully Integrated Two-Stage Watt-Level Power Amplifier Using 28-nm CMOS Technologydoi:10.1109/TMTT.2015.2503343Patrick OsmannJ FuhrmannKrzysztof DufreneAndreas Springer
Combined-class AB PAs have demonstrated the capability to provide the required power levels with high saturated efficiency levels, up to the Ka band [1,2], but they clearly suffer a marked drop in average efficiency when operated with non-constant envelope modulations. High efficiency, in OBO,...