Voltage Rise vs Voltage Drop 青云英语翻译 请在下面的文本框内输入文字,然后点击开始翻译按钮进行翻译,如果您看不到结果,请重新翻译! 翻译结果1翻译结果2翻译结果3翻译结果4翻译结果5 翻译结果1复制译文编辑译文朗读译文返回顶部 电压的上升与压降 翻译结果2复制译文编辑译文朗读译文返回顶部...
ELECTRICAL DEVICES FOR PROTECTION AGAINST VOLTAGE DROP AND/OR VOLTAGE RISEBAPAT S
Delays in the onset of the spot phenomena indicate that a temperature rise of the anode surface to the melting temperature precipitates the vapor release necessary for spot formation. 展开 关键词: arcs (electric) electrodes/ A5280M Arcs and sparks B2315 Gas discharges B2810D Dielectric breakdown...
For moderate to large currents, the series voltage drop will make a change from the expected bias voltage. Actual device currents will vary from the expected ones due to the current path provided by the shunt resistance. This resistance is high, but not high by the standards of parametric ...
The ohmic voltage drop across the electrolyte solution is denoted by US. Table 2. Sign convention in electrochemical cells Empty CellGalvanic cell (Battery)Electrolytic cell (Electrolyzer) Electrode potential vs a nonpolarizable reference electrode E(I)=ϕ0+η(I)+IRS Electromotive force (emf, ...
“L”) RL = 60 Ω VDD = 3.3 V 12 20 tPHL3 ns LE\DM1 = H VDD = 5 V 10 15 VDD = 3.3 V 25 40 tPHL CLK - SDO ns VDD = 5 V 18 25 Output rise time VDD = 3.3 V 35 55 tON 10~90 % of voltage ns waveform VDD = 5 V 10 20 Output fall time VDD = 3.3 V 4 10 ...
The wider PCB trace shown in Figure 2 reduces the voltage drop to meet the accuracy requirement, but parasitic inductance must also be considered. The PCB trace length in Figure 2 has an estimated inductance of about 14.1 nH, as shown in the LTspice® model of Figure 3. Figure 3. An ...
whileXQjin the second term represents the inductance voltage drop produced by the reactive power of a line. The sign of active power at the receiving end remains positive since its parameter is in a quadratic form. Therefore, the voltage drop of the second term of the equation will be subtra...
[3]. Similar to a GTO, the gate voltage rise-time has to be limited to avoid hot spots (current crowding) in the MCT cells. A gate voltage less than −5 V for turn-off and greater than 10 V for turn-on ensures proper operation of the MCT. The latching of the MCT requires ...
The voltage drop through X is in now in phase with VR, which therefore remains in phase with Vs but is appreciably smaller. Figure 41.3(d) is the general case, with a lagging power factor load that causes differences both of phase angle and magnitude between Vs and VR. These examples ...