nanomaterials Review Dynamic Manipulation of THz Waves Enabled by Phase-Transition VO2 Thin Film Chang Lu 1,2 , Qingjian Lu 1,2, Min Gao 1,2,* and Yuan Lin 1,2,3,* 1 School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China; ...
The model I – V characteristic of the VO2 switch corresponds to the experimental I – V characteristic (Figure 1), measured in our previous work [25], on a planar switch with a channel size of 2.5–3 µm, and a VO2 film thickness of ~ 250 nm, with a current limiting resistor ...