The VNL5030J-E and VNL5030S5-E are monolithic devices made using STMicroelectronics®VIPower®technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature ...
批量生产 储存到myST OMNIFET III全保护下桥臂驱动器 Order Direct 产品概述 描述 The VNL5030J-E and VNL5030S5-E are monolithic devices made using STMicroelectronics®VIPower®technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shu...
部件名VNL5030J-E 下载VNL5030J-E下载 文件大小844.74 Kbytes 页28 Pages 制造商STMICROELECTRONICS [STMicroelectronics] 网页http://www.st.com 标志 功能描述fullyprotectedlow-sidedriver 类似零件编号 - VNL5030J-E 制造商部件名数据表功能描述 STMicroelectronicsVNL5050N3-E ...
VNL5090N3-E 731Kb / 28P OMNIFET III fully protected low-side driver VNL5090N3TR-E 731Kb / 28P OMNIFET III fully protected low-side driver VNL5090S5-E 731Kb / 28P OMNIFET III fully protected low-side driver More results Similar Description - VNL5030J-E Manufacturer Part # Datasheet ...
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制造商编号VNL5030J-E 制造商ST(意法半导体) 唯样编号G-VNL5030J-E 供货Arrow代购 无铅情况/RoHs无铅/符合RoHs 描述 数据手册 PDF资料下载 暂无数据 参数信息常见问题 参数有误? 技巧:勾选主要参数,留空一些可替代的参数,点击查看相似商品,即可快速找到替代品了!
The VNL5030J-E and VNL5030S5-E are monolithic devices made using STMicroelectronics®VIPower®technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current ...
The VNL5030J-E and VNL5030S5-E are monolithic devices made using STMicroelectronics®VIPower®technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current ...