LED is an abbreviation for light-emitting diode, which is used in all types of semiconductor diodes with electrical properties similar to a PN junction diode. The LED V-I characteristic is as follows: V-I Characteristics of LED V-I Characteristics of PN Junction Diode A PN junction diode is...
10a (top) I-V characteristics of ITO/ZAM/MgO/Au diode; FIG. 10b (bottom) electroluminescent spectra of the diodes driven at 10V and 50 mA. The peak shown with the arrow shows the presence of near-band edge emission (NBE) of ZnO indicating hole injection into ZAM layer; in FIG. 10b,...
AP-N Junction Diodeis formed by doping one side of a piece of silicon with a P-type dopant (Boran) and the other side with a N-type dopant (phosphorus).Ge can be used instead of Silicon. The P-N junction diode is a two-terminal device. This is the basic construction of the P-N...
In recent years, the development and application of new products for UV LEDs have indeed become a hot spot in the LED industry. Compared with traditional mercury lamps, it has various excellent characteristics such as instant lighting, low power consumption, and environme...
Percent of Rated Peak ReverseVoltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Figure 7. Typical Transient Thermal Impedance 10000 TJ= 25 °C f = 1.0 MHz Vsig= 50 mVp-p 1000 100 10 0.1 1 10 100 ReverseVoltage (V) ...
The most common method of dimming a LED is by varying either forward current or voltage across it. Unfortunately, due to the characteristics of InGaN, varying current or voltage will shift the wavelength. This effect is proportional to the wavelength, with the longer wavelengths undergoing the ...
A dramatic improvement in the characteristics of blue/green light emitting devices was observed for devices grown on ZnSe substrates from which this damaged layer had been removed. This surface preparation procedure has led to the brightest and longest lasting II-VI green LEDs made in the world ...
The rate of flow of AsH<Sub>3</Sub> is set to not less than 5μmol/min and not more than 360μmol/min. In the case where this invention is applied to a light-emitting diode, AsH<Sub>3</Sub> is introduced, for example, at 23μmol/min in heat treatment of an Si ...
When observing the characteristics of capacitive sensors, it may seem surprising to encounter so few devices in real-world applications. The reasons for the lack in breakthrough can be found in the design complexity and the requirements for a matched sensing circuit. This paper will extensively ...
Separate section for SCR/TRIAC characteristics DC Network Analyzer This module is used study about DC Transmission line Here we provide the bi-polar Transmission Line. Simulated long, medium & short distribution lines selectable by patching in various length of DC Transmission line ...