: ‘ Very-high power density AlGaN/GaN HEMTs ’, IEEE Trans. Electron Devices , 2001 , 48 , pp. 586 – 590 .Wu Yifeng,Kapolnek D,Ibbetson J P,et al.Very-high power density AlGaN GaN HEMTs. IEEE Transactions on Electron Devices . 2001...
2. Experimental We stressed four nominally identical AlGaN/GaN HEMTs. All four devices had the same structure which consisted of a semi-insulating SiC substrate [8], a 0.5 µm length optically defined gate with a gate-integrated field plate [8], and a source-connected field plate [9]. ...
AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy. The thermal resistance of the AlGaN/GaN HEMTs on diamond substrates is 4.1 K mm/W, the lowest ever reported for AlGaN/GaN HEMTs, due ...
a very robust algangan hemt technology to high forward gate bias and current一个非常健壮的algangan hemt技术高向前门偏差和电流.pdf,Hindawi Publishing Corporation Active and Passive Electronic Components Volume 2012, Article ID 493239, 4 pages doi:10.1155/
With the promise of a new level of power performance at microwave\nfrequencies, GaN-based high-mobility-transistors (HEMTs) have attracted\nsustained research effort and shown steadfast improvements. Previous\nstate-of-the-art included power densities of 5.3-6.9 W/mm at 10 GHz from\nsmall ...
Submicron AlGaN/GaN HEMTs with very high drain current density grown by plasma-assisted MBE on 6H-SiCdoi:10.1109/LED.2002.806298Nils WeimannMj ManfraS ChakrabortyDM Tennant