; Bulk Crystal Growth; Epitaxial Growth; Fabrication Processes; Metal-Semiconductor Contacts and Unipolar Power Diodes; Metal-Insulator-Semiconductor (MIS) Capacitors and Unipolar; Bipolar Power Diodes and Power Switching Devices; Edge Terminations; Reliability of Vertical GaN and SiC Power Devices...
We report on the design, simulations and optimization of 5-20kV GaN and SiC vertical superjunction structures. The space charge in the GaN and SiC superjunction pillars have been optimized using superjunction p-n diode, and the best trade-off between breakdown voltage (BV) and specific on-res...
The lateral GaN technology, with itsHEMT design, has revolutionized the field of power electronics offering significant performance advantages and increasingly lower costs compared to conventional Si-based power transistors. Lateral structures can integrate active or passive devices to the GaN power HEMT o...
The ability to integrate ptype GaN layers in device structures by ion implantation represents a significant step for next-generation power devices.T. J. AndersonJ. D. GreenleeB. N. FeigelsonJ. K. HiteK. D. HobartF. J. KubGaN & SiC power technologies 5: 228th ECS Meeting...
It is expected that vertical GaN power devices will compete with native SiC power devices for the high-voltage market. In the last two years, SiC devices have been gaining market share for high-voltage applications and several companies have expanded the production of 6” and 8” SiC wafers....
The p-n diode performance is also comparable to “state-of-the-art leakage reported for lateral AlGaN/GaN diodes on Si and SiC substrates”.The researchers estimate a peak field of ~3MV/cm in the p-n diode under -300V reverse bias, “the highest in all reported GaN-on-Si devices,”...
Vertical GaN and Vertical Ga2O3 Power Transistors: Status and Challenges Wide bandgap (WBG) semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) are rapidly making inroads into the power semiconductor markets d... C Gupta,SS Pasayat - 《Physica Status Solidi A Applications &...
In this paper, a novel vertical normally-off GaN power transistor featuring a split gate with the intrinsic reverse conduction (RCVFET) and low gate charge is proposed. The static and dynamic device characteristics are studied and analyzed by simulation with Sentaurus TCAD. Benefiting from the mono...
Wide bandgap semiconductor materials such as SiC and GaN have a number of advantages for power devices including higher critical field for breakdown and high saturated drift velocity. If sufficiently low doping concentration bulk material can be obtained, the same process steps as describe for the ...
Currently, the overall GaN power device market is dominated by RF power devices. Major industries that dominate the global GaN power device market are telecommunications; consumer and enterprise; automotive; and military, defense, and aerospace. GaN power devices are mainly used in UPS and motor co...