A varactor diode alternative circuit having at least three varactor diodes that are in each case connected in series alternatingly opposite to one another and a resistor network and/or inductor network, which has the effect that at each of the varactor diodes, a control voltage supplied to the...
I–V and C–V performances of the proposed physics-based model are in good agreement with the measured one over the frequency range from 0.1 to 40 GHz for wide operation bias range from–10 to 0.6 V for these two PSVDs.The proposed equivalent large signal circuit model of this PSVD has...
The performance of each section can be analyzed based on lumped-element circuit models. The electrical size of the BPF is 0.258 λg × 0.255 λg, where λg is the guided wavelength at the central frequency. The design accuracy is verified through implementing and testing the final BPF....
Presented here is a low-power FM transmitter with varactor diode tuning using surface-mount devices (SMD) that will be received with a standard FM radio. Soldering surface mounted devices is not so hard and actually is quite easy. There are many designs for small FM transmitters but they have...
A physics based model for C-W characteristic of integrated planar Schottky varactor diode in microwave band is presented. The model takes into account the influences of the distribute channel series resistance introduced by planar structure, the dirtributed junction capacitance, the junction reverse sat...
A varactor diode includes a portion of a top semiconductor layer of a semiconductor-on-insulator (SOI) substrate and a gate electrode located thereupon. A first electrode having a doping of a first conductivity type laterally abuts a doped semiconductor region having the first conductivity type, wh...
diode VCO has been fabricated and the experimental results of the output power and frequency are compared with the computed results.In addition,the dependence of tuning bandwidth on the coupling between Gunn diode and varactor is also investigated.It is shown that the developed model and analysis ...
An ESD protection device includes a first well of a first semiconductor type disposed in a substrate of a second semiconductor type forming a first diode. A second well of the secon
To maintain the simplicity of equivalent circuit modeling while dramatically increasing accuracy, a set of analytical design equations are derived for nonlinear circuit analysis of 50-600 GHz Schottky diode varactor frequency doublers. Theseanalytical design equations contain semi-empirical coefficients ...
摘要: a selective rf circuit for a doppelumsetzungskanalwhler consists of three double tuned bandpaschaltkreise, of which each of about a third of the abstimmbereiches can be put to the vote.schaltdioden收藏 引用 批量引用 报错 分享