K. Horrigan, Vapor Pressure of the Metallic Elements, Canadian Metal- lurgical Quarterly 23, 309 (1984).C.B.Alcock,V. P. Itkin,M.K. Horrigan.Vapor Pressure of the metallic elements. Canadian Metallurgical Quarterly . 1984Alcock et al., 1984] Alcock, C. B., Itkin, V. P., and ...
Reactions between molten iron and silicate melts at high pressure: Implications for the chemical evolution of Earth's core E. Ito,K. Morooka,O. Ujike,... - 《Journal of Geophysical Research Solid Earth》 - 1995 - 被引量: 171 In situx-ray observation of the phase transformation of Fe2O...
Similar results have also been obtained for the metallic group IV elements Sn and Pb. This is in direct contradiction to current assumptions. Further, as a consequence of this quadratic behavior, the vapor pressure of semiconductor nanoparticles rises more slowly with decreasing size than would be ...
Thus the pressure will fall. Typically, the water will be sat (saturated) on a metallic surface and the rate of thermal diffusion is not high enough to sustain the evaporation of the water. Hence the water freezes to ice initially but as the heat diffuses through the ice, it melts and ...
The valve member is movable within the chamber and a sealing element is movably located on the point-bearing surface of the valve member. The sealing element may be metallic and is configured to releasably seal the opening when the valve member is urged in a direction towards the opening. ...
the development of metal organicchemical vapor deposition(MOCVD), which utilizes volatileorganometalliccompounds as the source of metallic atoms. These organometallics are mixed with transport agents of the other elements, most often hydrides, and give rise to chemical reactions of the types, for ...
Recently, graphene has gained significant interest owing to its outstanding conductivity, mechanical strength, thermal stability, etc. Among various graphene synthesis methods, atmospheric pressure chemical vapor deposition (APCVD) is one of the best syn
8. The method of claim 7, wherein the carrier gas is heated to a temperature at which the vapor pressure of the metallic element or salt of at least 5 mTorr. 9. The method of claim 7, wherein the carrier gas is heated to a temperature between about 100 and 1000° C. 10. The ...
and compatibility with miniaturization. Various PVD techniques, including sputtering, evaporation, and ion beam deposition, used to fabricate thin films for tailoring materials’ properties for the advanced design and development of high-performing pH sensors, have been explored worldwide by many research...
Chemical vapor deposition, otherwise known as (CVD) is a technique for the deposition of metallic, ceramic, and semiconducting thin films by depositing solid on to a heated surface by a chemical reaction from the vapor or gas phase.