van der Waals epitaxyHigh‐quality and polarity‐controlled III‐nitride is crucial for realizing high‐performance and new types of device designs with rich functionalities, but there are still many difficultie
The epitaxial growth of a layered material onto those surfaces proceeds with a van der Waals force, resulting in good heteroepitaxial growth even with a large lattice mismatch between the grown and the substrate materials. It has also been found that van der Waals epitaxy can be applied to the...
Van der Waals epitaxy (vdWE) of GaN films on twodimensional (2D) materials can overcome a lattice mismatch during crystalline growth. Moreover, this type of epitaxy allows the GaN films to be released from 2D materials because of the weak van der Waals force. However, it is difficult to ...
Van der Waals epitaxy was applied to the fabrication of a highly heterogeneous system such as transition metal dichalcogenides (TX 2) on mica. TX 2 were grown epitaxially on the mica with a preferential orientation of TX 2[11 20] ‖ mica[100] on TX 2(0001) ‖ mica(001). Uniform ...
The emergence of two-dimensional atomic crystals (2DACs) and van der Waals heterostructures (VDWHs) has enabled a bonding-free strategy to build complex heterostructures beyond conventional epitaxy. This talk will begin with an overview of early efforts to leverage van der Waals (VDW) interactions...
Fabrication of ultrathin heterostructures with van der Waals epitaxy. J. Vac. Sci. Technol. B 3, 724 (1985). Article Google Scholar Yi, H. et al. Crossover from Ising- to Rashba-type superconductivity in epitaxial Bi2Se3/monolayer NbSe2 heterostructures. Nat. Mater. 21, 1366–1372 (...
Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper. Nature 570, 91–95 (2019). Article CAS Google Scholar Xu, X. et al. Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe2. Science 372, 195...
Epitaxy technology produces high-quality material building blocks that underpin various fields of applications. However, fundamental limitations exist for conventional epitaxy, such as the lattice matching constraints that have greatly narrowed down the
Young Jun Chang:University of Seoul, South Korea Young Joon Hong:Sejong University, South Korea Submission Status: Open| Submission Deadline: Closed Remote and van der Waals (vdW) epitaxy differs from con-ventional epitaxy that relies on forming strong chemical bonds on a bare wafer. Instead, ...
Recently, a novel method termed as “van der Waals (vdW) epitaxy” provides promise to solve both above-mentioned difficulties. By introducing 2D materials between substrate and epitaxy layer, the crystal quality could be improved due to the 2D buffer layer and the release of epitaxy layer is ...