In addition, the UPS study reveals that the valence band offset at the Si 3N 4/silicon oxide interface is 2.5卤0.2 eV.doi:10.1016/S0040-6090(03)00601-1Vladimir A GritsenkoAlexandr V ShaposhnikovW.M KwokHei WongGeorgii M Jidomirov
Since thevalence bandoffset in GeSi layers under biaxial compression is large, GeSi strained layers grown on Si(100) substrate are well suited for the study of resonant tunnelling of holes. As discussed earlier, strain removes the degeneracy of the heavy and the light hole bands. It is possibl...
Additionally, the suitability and expected performance of plasmon-enhanced GMZO thin-film based buffer-less SCs are probed through; 1) band-offset analysis at the plasmon enhanced-GMZO/CIGSe heterojunction; 2) simulation studies to analyze the effect of conduction band-offset (CBO) on the ...