VBM，即Valence Band Maximum，指的是价带顶。在固体物理中，价带顶这一概念对于理解固体材料的电子结构至关重要。价带顶是指价带能量的最大值，这一概念在解释固体的导电性质、半导体特性、以及光响应等方面都具有重要意义。价带和导带是能带理论中的两个基本概念。价带是所有可能的电子能级中，能量最低的...
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In lead–halide perovskites, antibonding states at the valence band maximum (VBM)—the result of Pb 6s-I 5pcoupling—enable defect-tolerant properties; however, questions surrounding stability, and a reliance on lead, remain challenges for perovskite solar cells. Here, we report that binary GeSe ...
Upon different stages of growth, the valence band maximum can thus be traced during the build up of the interface giving an accurate value for the valence band offset of this heterojunction.doi:10.1016/S0169-4332(00)00433-5C. KreisM. Traving...
2b is a strongly dispersing band spanning from the valence band maximum at E − EF ≈ −1.1 eV down to ≈ −3.8 eV. This band crosses through the px,y-derived states in the vicinity of the VBM. We attribute this band to be of Se pz derivation, with enhanced ...
The valence band maximum (VBM) was determined by linearly fitting the leading edge of the valence band and the flat energy distribution from the XPS measurements, and finding the intersection of these two lines, Summary and conclusions The AZO/Ga2O3 heterojunction has a nested gap alignment of...
The binding energy at the valence band maximum (BEVBM) of Sin+ in the i-HfSi2/Sin+/Si(110) structure is lower than 1.5 +/- 0.7 eV as compared to that in the HfO2/Sin+/Si(110) structure (n = 2, 3, and 4). The local valence electric states of the nearest neighbors and the ...
We address the issue of accurate determination of the valence band maximum (VBM) for SrTiO3(001) single crystals and epitaxial films, as well as TiO2(001) ... SA Chambers,TC Droubay,TC Kaspar,... - 《Journal of Vacuum Science & Technology B Microelectronics & Nanometer Structures Processing...
The spatially normalized segments of grey and white matter were smoothed using a 12-mm full-width half-maximum isotropic Gaussian kernel according to the optimized VBM protocol of Good et al [70]. Methods for the MRI region of interest analyses The measurements for the volumes of the ...
This indicates the 3C-SiC valence band maximum (VBM) is ～0.06 eV below the 4H-SiC VBM, consistent with the calculated ～0.05 eV type-Ⅱ valence band offset between these polytypes. We also observe no evidence of an additional VBM in 3C-SiC, which supports the proposal that the second ...