能隙（Energy gap）和带隙（Band gap）是固体物质中电子能级结构的两个重要概念，它们在能量范围和物理意义上存在一些差异。1. 能隙：能隙是指在固体材料中，不同能级之间的能量间隔。具体而言，能隙是指价带（Valence band）和导带（Conduction band）之间的能量差，表示电子从价带跃迁到导带所需的最...
This experiment determined the conduction-band offset in the InAs0.775Sb0.225/InAs SLS. The energies of the conduction and valence bands in unstrained InAs1x Sb x and their bowing with respect to the Sb composition are discussed.doi:10.1007/s11664-013-2528-9Youxi Lin...
Other articles where valence band is discussed: colour: Pure semiconductors: …full lower band, called the valence band, and an exactly empty upper band, the conduction band. Because there are no electron energy levels in the gap between the two bands, t
The chapter Band theory covers many important concepts, one of them is about the forbidden energy gap. It is defined as the gap between the valence band and conduct band. The gap between the valence band and conduction band. If this gap is greater then it means valence band electrons are ...
Define valence band. valence band synonyms, valence band pronunciation, valence band translation, English dictionary definition of valence band. n. The outermost electron shell of atoms in an insulator or semiconductor in which the electrons are too tigh
求高手翻译(微电子专业英语)!in the following,the band structures of various important and prototype semiconductors are discussed. the band below the fundamental energy gap is called the valence band. The band above it the conduction
so that thevalence bandelectrons after receiving a large optical excitation wavelength, the first transition to impurity energy level, by once again absorb the energy, the transition from the impurity level to the conduction band, thereby reducing the energy required by stimulated to achieve so that...
This is because of the possibil- ity of tuning the width of the forbidden energy gap by varying the composition of the alloys. GaAlP alloys present an interest for optoelectronic devices in the visible region because the band gap increases by in- creasing the Al content in the alloy [l, ...
Energy gap and band alignment for (HfO2)(x)(Al2O3)(1-x) on (100) Si (HfO2)x(Al2O3)1−x,the valence band offset(ΔEν)and the conduction band offset(ΔEc)between(HfO2)x(Al2O3)1−xand the (100) Si substrate... HY Yu,MF Li,BJ Cho,... - 《Applied Physics Letters...
Hence, both the oxidizing power of the valence band holes and the reducing power of the conduction band electrons are lower than those of non-transition metal sulfides. 展开 关键词: materials science semiconductor materials oxide minerals sulfide minerals electronic structure catalysts energy gap ...