This article aims to review in rather cursory fashion the ways the concepts of lattice defects have contributed at an early stage to our understanding of solid-state kinetics in metals and insulators. The importance of point defects in solid-state kinetics was just beginning to be widely ...
vacancies (crystal)/ self interstitialsCdtracer self diffusionThe temperature dependence of tracer self-diffusion measurements in cadmium is analyzed in conjunction with investigations of the equilibrium concentration of vacancies by thermal expansion and positron annihilation. The following values for the ...
The aim of this paper is to derive from experimental data reliable information on vacancies and self-interstitials in the hexagonal metals Zn and Cd, in particular on their migration enthalpies, and thus to put on a firm footing the interpretation of further experiments, e.g. in the fields ...
Vacancies and interstitials and their interactions with other de- fects in silicon," in Proc. 3rd Symp. Defects in Silicon (Electrochem. Soc.), vol. 99-1, Pennington, NJ, 1999, pp. 38-52.Watkins G D.Vacancies and Interstitials and their Interac-tions with Other Defects in Silicon.. ...
摘要: It is shown that the experimental data on lead permit an unambiguous assignment of recovery stage III to the migration of self-interstitials and of recovery stage IV to monovacancy migration.关键词: n33110* --physics (solid state)--radiation effects annealing diffusion electrons interstitials...
Origin of unbalanced reaction of vacancies and interstitials during irradiation with cascades and influence on microstructural evolutionTheoretical or Mathematical/ crystal microstructureimpurity-defect interactionsinterstitialsradiation effectsstochastic processesvacancies (crystal)/ vacancy-interstitial reaction...
interstitialssiliconvacancies (crystal)/ energy levelssecondary processesradiation-induced defect formationcharge-dependent selective trapsvacanciesBased on the analysis of the secondary processes of radiation-induced defect formation in Si crystals with charge-dependent selective traps for vacancies and ...
Defects related to nitrogen aggregation in IaB diamond also trap interstitials, but do not release them upon annealing. Carbon interstitials are not trapped by NS–NS pairs. Instead, an increase in the concentration of NS–NS centres enhances the production rates of vacancies and interstitials, ...
Electronic Structure, Defect Chemistry, and Transport Properties of SrTi1-xFexO3-y Solid Solutions oxygen vacancies and interstitials generated by the anion Frenkel reaction dominate the defect equilibria, leading to predominant ionic conductivity at intermediate... A Rothschild,W Menesklou,HL Tuller,...
Using atomistic simulations on a model semicoherent interface, we show that the formation, migration, and clustering of vacancies and interstitials at semicoherent interfaces depend on the structure of the misfit dislocation network of the interface. Interfacial point defects trap at misfit dislocation ...