To quantitatively assess the role of interstitials and vacancies, we performed ab initio investigations of the relevant processes in 3C-SiC. We show that carbon vacancies(A. Zywietz et al.), Phys. Rev. B 59, 15166 (1999). and silicon interstitials in both p-type and intrinsic material ...
The spread in Stage-III activation energies and the unusual recovery kinetics may be understood in terms of a strong anisotropy in the diffusion coefficient of the self-interstitials. From this the configuration, the migration mode, and the activation energy of the Stage-III interstitial have been...
The aim of this paper is to derive from experimental data reliable information on vacancies and self-interstitials in the hexagonal metals Zn and Cd, in particular on their migration enthalpies, and thus to put on a firm footing the interpretation of further experiments, e.g. in the fields ...
Origin of unbalanced reaction of vacancies and interstitials during irradiation with cascades and influence on microstructural evolutionTheoretical or Mathematical/ crystal microstructureimpurity-defect interactionsinterstitialsradiation effectsstochastic processesvacancies (crystal)/ vacancy-interstitial reaction...
interstitialssiliconvacancies (crystal)/ energy levelssecondary processesradiation-induced defect formationcharge-dependent selective trapsvacanciesBased on the analysis of the secondary processes of radiation-induced defect formation in Si crystals with charge-dependent selective traps for vacancies and ...
Accuracy in X-ray rocking-curve analysis as a necessary requirement for revealing vacancies and interstitials in regrown silicon layers amorphized by ion implantationCerebellar CortexEndocannabinoidsNeural InhibitionPurkinje CellsReceptors, Kainic Acid
A classical picture of the role of vacancies and interstitials in helium-4. J. Low Temp. Phys. 152, 156-163 (2008).P.N. Ma, L. Pollet, M. Troyer, F.C. Zhang, A classical picture of the role of va- cancies and interstitials in Helium-4, J. Low Temp. Phys. 152 (2008) 156...
Homogeneous void nucleation in metals containing arbitrary vacancies and interstitials has been reexamined, with corrections made to the original work by Katz and Wiedersich. The void size distributions derived previously missed an exponential modification function with void size as the exponent. As a re...
The interstitial-vacancy recombination, the diffusion of vacancies, and interstitials to defect sinks (e.g., surfaces or dislocations) as well as the formation of interstitial clusters are considered. The calculated migration and reaction barriers suggest a hierarchical ordering of competing annealing ...
silicon self-interstitials), which areaccumulated in silicon due to ion damage, and with small clusters that form anddissolve in the course of diffusion... TP Of 被引量: 0发表: 2015年 Uphill Drift of Vacancies and Self-Interstitials in Silicon Crystal Growth Accurate control of the defectivity...