The films are grown using the silane–propane–hydrogen system on off-axis (0001) 6H- and 4H-SiC substrates. Layers with doping levels in the low ... KORDINA,O. - 《Physica Status Solidi》 被引量: 321发表: 1997年 Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation den...