The proposed structures are assessed by comparing their speed, power, and energy parameters with those of other adders using a 45-nm static CMOS technology for a wide range of supply voltages. The results that are obtained using HSPICE simulations reveal, on average, 44% and 38% improvements ...
With a 10X speed improvement you can now reach your tapeout goal more quickly, simulate more PVT corners and even simulate scenarios that weren’t feasible with older, slower simulators. ALPS-GT accepts netlists in HSPICE and Spectre formats, handles all of the popular model files, accepts Ver...
and programming the RAM with a one requires a single via to VDD on the BLD node. In addition, no core cell analysis or HSPICE modeling changes are required, due to minimal core cell changes, but the cell would probably need to be re-extracted for bitline capacitance. No addressing changes...
The electrical parameters of the MTJ are then encapsulated in a Verilog-A model and used in HSPICE to perform bit-cell level optimization. The optimization technique is applied to STT-MRAM bit-cells designed using 45 nm bulk and 45 nm silicon-on-insulator CMOS technologies. Finally, ...