A uni-travelling carrier photodiode includes an absorption region of p-type doped material. The photodiode further includes a first collector layer and second collector layer wherein the absorption region is located between the first collector layer and the second collector layer.Mohand Achouche...
Iga, et al.High-input-power-allowable uni-travelling-carrier waveguide photodiodes with semi-insulating-InP,.IEEE Electronics Letters. 1999Yuda M,Kato K,Iga R. High-input-power-allowable uni-travelling-carrier waveguide photodiodes with semi-insulating-InP[J].IEEE Electron Device Letters,1999,(16)...
A high-efficiency uni-travelling carrier (UTC) photodiode has been developed which employs an edge-illuminated refracting-facet photodiode (RFPD) structure. The fabricated UTC-RFPD shows a maximum responsivity of 0.48 A/W even with an absorption layer as thin as 280 nm, and a high output pea...
A uni-travelling-carrier photodiode module with a WR-6 waveguide output port for operation in the D-band has been developed. The bandwidth with the output power above -10 dBm ranged from 104 to 185 GHz. The module stability was also confirmed under an optical input stress test, a temperatu...
High bandwidth surface-illuminated InGaAs/InP uni-travelling-carrier photodetector 单行载流子INGAAS高带宽InP光电探测器光照饱和输出反向偏置Uni-traveling-carrier photodiodes (UTC-PDs) with ultrafast response and high saturation output are reported. A gradient doping layer and a narrow InP cliff layer were ...
We propose the use of uni-travelling carrier photodetectors (UTC-PDs) as both source and detectors for the range up to 2 THz.Cyril C. RenaudMartyn J. FiceLalitha PonnampalamMichele NatrellaChris GrahamAlwyn J. SeedsSPIE Conference on Quantum Sensing and Nanophotonic Devices...
uni-travelling-carrier modeoptically gradual coupling modeBased on appropriate combination of different band-gap InGaAsP, a new edge-coupled two-terminal double heterojunction phototransistor (ECTT-DHPT) was designed and fabricated, which is double heterojunction, free-aluminium, and works under uni-...
A uni-travelling carrier photodiode includes an absorption region of p-type doped material. The photodiode further includes a first collector layer and second collector layer wherein the absorption region is located between the first collector layer and the second collector layer.MOHAND ACHOUCHE...
The invention discloses a low-power consumption zero-bias uni-travelling carrier photodetector. The photodetector is formed by an InP semi-conducting substrate and an epitaxial layer arranged on the InP semi-conducting substrate. The epitaxial layer comprises the InP semi-conducting substrate, a first...
Uni-Travelling-Carrier Photodiodes (UTC-PDs) are pivotal for the advancement of high-speed optical communication systems. Current UTC-PDs have a trade-off between high performance and low production costs. The performance of conventional Ge/Si UTC-PDs is limited by the materials, primarily due to...