Undoped Si Item #3193 100mm Undoped (100) >10,000 ohm-cm 525um DSP Prime Research request: "We need Undoped Silicon Wafers with Oxide layer should have a layer of 1 micron. In addition we are going to use them mainly for optical measurements, hence the impurity levels should not be ...
In this study, SIMS measurements have been carried out to obtain the distribution of residual shallow donor impurities such as Si, S, Se and Te in several wafers. We describe the correlation between the impurity distribution and dislocation density, and a possible origin of resistivity ...
"I am looking to purchase 254" Si waferswith a thickness of 250um. Could you send me a price list for the products you offer, please? The previous batch of wafers we ordered from University Wafers were "4 inch wafers of intrinsic Silicon, double side polished, Ori <100>, high-resistivi...
Evidence for the Antisite Defect BAs in Si and B Co-Implanted and B Implanted Undoped Si Lec-Gaas Crystal Optical and electrical properties of undoped SI-LEC GaAs wafers implanted with B and co-implanted with B and Si have been investigated by photolurninescenc... ZG Wang,CH Wang,YL Liu...
It was found that by wafer annealing at temperatures higher than 1100°C with arsenic pressure of more than 1 atm, wafers with reasonable electrical properties and with low microscopic defect density could be obtained. When these wafers were reannealed at 950°C in N2 gas flow, they showed im...
Q1:deliver 9 points resistivity measurement results for the Si ingot after growth, but after some time, when the resistivity stabilize? A:After silicon crystal growth, the resistivities of several points would be test when temperature is 23°C, they are stable. ...
It was observed that the concentrations of all deep electron and hole traps decreased when moving from seed to tail of the boule and from the center to the edge of the wafers. Modeling of the growth process suggests that the C/Si ratio increases in a s...
Annealing Effect on the Electrical and the Optical Characteristics of Undoped ZnO Thin Films Grown on Si Substrates by RF Magnetron Sputtering Undoped ZnO films have been grown on Si wafers by RF-magnetron sputtering and have been characterized as a function of annealing temperature (T a) by emp...
Polycrystalline 3C-SiC films, in situ doped with nitrogen, are grown by low-pressure chemical vapor deposition (LPCVD) on 100 mm Si (100) wafers at 800 °C... F Liu,C Carraro,AP Pisano,... - 《Journal of Micromechanics & Microengineering》 被引量: 38发表: 2010年 ...
Optical and electrical properties of undoped SI-LEC GaAs wafers implanted with B and co-implanted with B and Si have been investigated by photolurninescence (PL) spectrum and Van de Pauw measurements. All the experimental results indicated that boron can present as acceptor B/sub As/ and both...