Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a renaissance exemplified byadvances in material-level understanding, extensions of known concepts to new materials, novel device concepts, and new applications. This focus issue presents a timely selection of papers spanning the...
winter sale! up to 25% on elsevier books and ebooks plus free shipping. home books subjects engineering and technology ultrawide bandgap semiconductors ultrawide bandgap semiconductors 1st edition, volume 107 - july 26, 2021 editor: yuji zhao language: english hardback isbn: 9780128228708 9 7 8 -...
Researchers have made unparalleled ultrawide-bandgap semiconductors through temperature and timing, just like baking bread. Alloying, the process of mixing metals in different ratios, has been a known method for creating materials with enhanced properties for thousands of years, ever since copper and ti...
offering promising avenues for tandem solar cells12. However, minimizing the voltage loss when their bandgap is increased to above 1.90 eV for triple-junction tandem use is challenging3,4,5. Here we present a previously unknown pseudohalide, cyanate (OCN−), with a comparable effective ...
Competition of sub-bandgap absorption mechanisms in commercial GaAs photodiodes We investigate the response of a commercial p-i-n GaAs photodiode to sub-bandgap energy. We describe the competition between single-photon absorption mecha... B Vest,J Jaeck,R Haiedar,... - European Optical Society ...
Perovskite bandgap tuning without quality loss makes perovskites unique among solar absorbers, offering promising avenues for tandem solar cells1,2. However, minimizing the voltage loss when their bandgap is increased to above 1.90 eV for triple-junct
Electromagnetic interference (EMI) reduction from printed circuit boards (PCB) using electromagnetic bandgap structures As digital circuits become faster and more powerful, direct radiation from the power bus of their printed circuit boards (PCB) becomes a major concern for ... S Shahparnia,OM Ramahi...
Exploiting the small bandgap and highly non-parabolic band structure of InSb we produce refractive index shifts (Δn > 1.5) far greater than conventional thermo-optic shifts. Further we experimentally demonstrate thermally driven steady-state resonant shifts (Δλ R ~ λ FWHM) of ...
HWH Han - 《Journal of Semiconductors》 被引量: 0发表: 2015年 A single channel, 6-bit 410-MS/s 3bits/stage asynchronous SAR ADC based on resistive DAC This paper presents a single channel, low power 6-bit 410-MS/s asynchronous successive approximation register analog-to-digital converter ...
In article number 1806006, Feng‐Xia Liang, Lin‐Bao Luo, Yu‐Cheng Wu, and co‐workers summarize the recent advances in the development of various DUVPDs based on different kinds of inorganic ultrawide bandgap semiconductors such as Ga2O3, MgxZn1?xO, III‐nitride compounds, and diamonds....