This dissertation focuses on the development of chemical vapor deposition (CVD) of β-Ga2O3, an ultra-wide bandgap (UWBG) semiconductor representing one of the most promising semiconducting materials for next generation power electronics. Here, two types of CVD thin film deposition techniques were ...
Ultrawide Bandgap Ga2O3 Technologies - Benefits of Heterogeneous IntegrationMartin KUBALL英国布里斯托大学新兴技术系主任、教授Martin KUBALLRoyal Academy of Engineering Chair in Emerging Technologies at the University of Bristol, UK 展开更多 0条评论
AlxGa1–xN is an alloyed UWBG semiconductor that typically possesses a hexagonal wurtzite structure. Its bandgap can be tuned from 3.4 eV (GaN atx = 0) to over 6 eV (AlN atx = 1) by varying the aluminum compositionxin the material [1]. This tunability permits the ready format...
(7) Besides the orthorhombic crystal structure of 𝛽-LiGaO2 (wurtzite, with a bandgap energy of ∼5.8 eV), LiGa5O8 (spinel, ∼5.36 eV) can be stabilized in the spinel cubic structure. Phase transformation from powder LiGaO2 to LiGa5O8 is at high temperatures ≈1373 K....
This work provides valuable information on the epitaxial growth and band alignment of the ultrawide bandgap -Ga 2 O 3 /h-BCN heterojunctions, opening the door to a myriad of electronic and photonic applications.doi:10.1016/j.apsusc.2022.152502Xin Zhou...
Its bandgap was broadened to 6.14 eV, and a vacuum ultraviolet (VUV) (AlGa) 2 O 3 /Ga 2 O 3 :Si photodetector was subsequently fabricated. The detector exhibits a pretty high on-off ratio of about 10 3 , an open-circuit voltage of 1.0 V and a responsivity of 8.1 mAW 1 at 0 V...
Robust bipolar devices based on exclusively ultrawide bandgap (UWBG) semiconductors are highly desired for advanced power electronics. The heterojunction strategy has been a prevailing method for fabricating a bipolar device due to the lack of effective bipolar doping in the same UWBG material. Here,...
Improved Ohmic contacts on Ga2O3films using ZnO:(B, Ga)/Au electrodesAccurately measured specific contact resistance of electrode with d-CTLM methodLowest specific contact resistance of 1.049×102Ω·cm2was achieved.Enhanced electrode performance due to BGZO intermediate semiconductor layer...