This dissertation focuses on the development of chemical vapor deposition (CVD) of β-Ga2O3, an ultra-wide bandgap (UWBG) semiconductor representing one of the most promising semiconducting materials for next generation power electronics. Here, two types of CVD thin film deposition techniques were ...
Ultrawide Bandgap Ga2O3 Technologies - Benefits of Heterogeneous IntegrationMartin KUBALL英国布里斯托大学新兴技术系主任、教授Martin KUBALLRoyal Academy of Engineering Chair in Emerging Technologies at the University of Bristol, UK 展开更多 0条评论
Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a renaissance exemplified by advances in material-level understanding, extensions of known concepts to new materials, novel device concepts, and new applications. This focus issue presents a timely selection of papers spanning th...
(7) Besides the orthorhombic crystal structure of 𝛽-LiGaO2 (wurtzite, with a bandgap energy of ∼5.8 eV), LiGa5O8 (spinel, ∼5.36 eV) can be stabilized in the spinel cubic structure. Phase transformation from powder LiGaO2 to LiGa5O8 is at high temperatures ≈1373 K....
It was found that the ε-Ga 2 O 3 /h-BCN heterojunction exhibits a type-II band alignment with a conduction band offset of 2.77eV and a valence band offset of1.60eV. This work provides valuable information on the epitaxial growth and band alignment of the ultrawide bandgap -Ga 2 O 3 ...
ultrawide bandgapvacuum ultravioletphotovoltaic detectorOne judiciously designed strategy of utilizing an ultrathin but conductive Ga 2 O 3 :Si nanolayer to prepare (AlGa) 2 O 3 crystalline film is demonstrated. Benefiting from the existence of Ga 2 O 3 :Si nanolayer, a high-quality (Al 0.68 ...
Improved Ohmic contacts on Ga2O3films using ZnO:(B, Ga)/Au electrodesAccurately measured specific contact resistance of electrode with d-CTLM methodLowest specific contact resistance of 1.049×102Ω·cm2was achieved.Enhanced electrode performance due to BGZO intermediate semiconductor layer...
Robust bipolar devices based on exclusively ultrawide bandgap (UWBG) semiconductors are highly desired for advanced power electronics. The heterojunction strategy has been a prevailing method for fabricating a bipolar device due to the lack of effective bipolar doping in the same UWBG material. Here,...