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Book description Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The c ... read full description Purchase book Share this bookBrowse...
Ultra-wide Bandgap Semiconductor Materials 1st Edition - June 18, 2019 Editors:Meiyong Liao, Bo Shen, Zhanguo Wang Language: English Paperback ISBN:9780128154687 9 7 8 - 0 - 1 2 - 8 1 5 4 6 8 - 7 eBook ISBN:9780128172575 9 7 8 - 0 - 1 2 - 8 1 7 2 5 7 - 5...
Ultra-Wide-Bandgap Semiconductors: Materials Opportunities and Challenges.Ultra-Wide-Bandgap SemiconductorsNo abstract availableJohnson, N. M... NM Johnson 被引量: 0发表: 2017年 Wide bandgap III-Nitride semiconductors: opportunities for future optoelectronics Wide bandgap III-Nitride semiconductors: opportun...
Yoshitake Toda2, Shigenori Ueda3,4, Naoki Ohashi2,5, Hidenori Hiramatsu1,2, Hideo Hosono1,2 and Toshio Kamiya1,2 The variety of semiconductor materials has been extended in various directions, for example, to very wide bandgap materials such as oxide semiconductors as well as to amorphous sem...
However, bipolar junction-based electronics requires the development of both n- and p-type semiconductor materials. Indeed, ultra-wide bandgap n-type doped binary oxides are already well developed [18,19], but, due to high formation energy and large ionization energy of native acceptors, and ...
First-principles calculations of structural, electrical, and optical properties of ultra-wide bandgap (AlxGa1−x)2O3 alloys. Journal of Materials Research 36, 4790–4803 (2021). https://doi.org/10.1557/s43578-021-00371-7 Download citation Received10 May 2021 Accepted30 August 2021 Published...
Ultra-wide-body digital isolator is a highly reliable isolation product that features high electromagnetic immunity, low electromagnetic radiation and low power consumption, and can withstand higher isolation surge voltage. The creepage distance of the ultra-wide-body package is up to 15 mm, which ca...
Ga2O3 is emerging as an excellent potential semiconductor for high power and optoelectronic devices. However, the successful development of Ga2O3 in a wide... P Saadatkia,S Agarwal,A Hernandez,... - 《Physical Review Materials》 被引量: 0发表: 2020年 Electrical conductivity tensor of β-G...
Wide-bandgap semiconductor device technologies for high-temperature and harsh environment applications In: (Edited by Sharif, A.) Harsh Environment Electronics: Interconnect Materials and Performance Assessment, 1st edn (Wiley-VCH Verlag GmbH & Co. KGaA, 2019). Tsao, J. Y. et al. Ultrawide-...