The new diodes also maintain low on-state voltages, a positive temperature coefficient during on-state, and low values of reverse leakage current at high temperatures. These performance advantages makes the C-class diodes very attractive for modern high frequency applications where a fast and rugged...
US2JDF:Fast/Ultra-Fast Diodes Part NumberData SheetSPICE ModelQualified to AECQ10xPPAP CapableProduct TypeConfigurationPower Rating (W)MaximumAverageRectifiedCurrent IO (A)Maximum Peak Forward Surge Current IFSM (A)Peak RepetitiveReverse VoltageVRRM (V)ForwardVoltageDrop VF (V)@ IF (A)Maximum Reverse...
RS1JDF RS1JDF.pdf - Yes No FAST RECOVERY RECTIFIER Single 1.4 1 30 600 1.3 1 5 600 250 6 DescriptionThe RS1JDF is a rectifier packaged in the low profile D-FLAT package. Providing fast recovery time for high efficiency, this device is ideal for use in general rectification applications.A...
A more precise but less common term is actually ultrashort pulse lasers; such lasers utilize ultrafast processes and emit light with very fast changes in optical power, but are strictly speaking not ultrafast themselves. Types of Ultrafast Lasers The most important types of ultrafast lasers (without...
www.vishay.com BYV27-600 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode 949539 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end ...
MUR1020F RoHS COMPLIANT Ultra-Fast Recovery Diodes 10A FRED Features ● Adopt FRED chip ● Low forward Voltage drop ● Fast reverse recovery time ● High frequency operation ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard...
MUR1610CT THRU MUR1660CT RoHS COMPLIANT Ultra-Fast Recovery Rectifier Diodes Features ● High frequency operation ● High surge forward current capability ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ...
Equipping these ultra-fast diodes with inverse tapers could significantly boost their external responsivities. Coupling losses of 1.5 dB, which have already been demonstrated17, in combination with device Ge150_10 would yield a bandwidth–efficiency product of ~60 GHz. It is thus feasible that...
Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. However, the synthesis of large-scale and highly-crystalline InxGa1−xSb NWs is still a challenge. Here,
ARTICLE https://doi.org/10.1038/s41467-019-09606-y OPEN Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires Dapan Li1,2, Changyong Lan 1,3, Arumugam Manikandan4, SenPo Yip1,2,5, Ziyao Zhou1,2, Xiaoguang Liang1,2, Lei Shu1,2, Yu-Lun Chueh 4, Ning ...