SW1 pin swings from a diode voltage drop below ground up to VIN. PGND (Pins 17, 20): Power Ground. Connect these pins closely to the source of the bottom N-channel MOSFET. BG1 (Pin 18): Bottom Gate Drive. Drives the gate of the bottom N-channel MOSFET between ground and INTVCC. ...
Typical Forward Voltage Drop: VF=1.3V@ IF=20A, Reverse Voltage: VRRM=650V, Avalanche Energy Rated, High Surge Capability, Low Power Loss and High Efficiency, Silicon Carbide Substrate Type SiC Schottky Diode Place of Origin Zhejiang, China Package Type Through Hole Package / Case TO-247 Operat...
The voltage swing at this pin is ground to VOUT + DRVCC. BST (Pin 26): TGATE Driver Supply Input. The positive terminal of the boot-strap capacitor, CB, is connected to this pin. This pin swings from a diode voltage drop below DRVCC up to VOUT + DRVCC. BGATE (Pin 27): Bottom...
Back-to-back FETs can be used in lieu of a Schottky diode for reverse input protection, reducing voltage drop and power loss. A shutdown pin reduces the quiescent current to less than 7µA for the LT4356-1 during shutdown. The LT4356-2 differs from the LT4356-1 during shutdown by...
Voltage swing at these pins is from a Schottky diode (external) voltage drop below ground to VIN (where VIN is the external MOSFET supply rail). TG1 to TG3: High Current Gate Drives for Top N-channel MOSFETs. These are the outputs of floating drivers with a voltage swing equal to the ...
Voltage swing at these pins is from a Schottky diode (external) voltage drop below ground to VIN. TG1, TG2 (Pins 27, 16/Pins 26, 14): High Current Gate Drives for Top N-Channel MOSFETs. These are the outputs of floating drivers with a voltage swing equal to INTVCC – 0.5V ...
This OR-ing controller enables MOSFETs to replace diode rectifiers in power distribution networks, reducing power loss and voltage drop. The MX16171D100 controller provides charge pump gate drive for an external N-channel MOSFET and fast response comparator to turn off the FET when current flows ...
(1 − D) Low-side MOS drive loss is calculated by: Plow−side _ drive = Qg _ low−side × fS × Vdrive Body diode conduction loss is calculated by: Pbodydiode = 2 × VF × ILOAD × tdeadtime × fS Where VF is body diode forward voltage drop, tdeadtime is high-side ...
14 3958f LT3958 APPLICATIONS INFORMATION The power dissipated by the diode is: PD = IO(MAX) • VD where VD is diode's forward voltage drop, and the diode junction temperature is: TJ = TA + PD • RθJA The RθJA to be used in this equation normally includes the RθJC for the...
Voltage Drop ((V_F)): A typical switch has a non-zero voltage drop during the on-state. Power Dissipation Formula: PL(on)=δ⋅IF⋅VF Where: (I_F) = On-state current (\delta) = Duty cycle, calculated as: δ=t1T (T) = Time period (the reciprocal of operating frequency) ...