of the first conductivity type; andpatterning the semiconductor layer to form a gate electrode that includes a first portion and a second portion, wherein the first portion includes a portion of the first doped
A layout of a cell of a semiconductor device is disclosed to include a diffusion level layout including a plurality of diffusion region layout shapes, including a p-type and an n-type diffusion region separated by a central inactive region. The layout of the cell includes a gate electrode lev...
The process can further include patterning the semiconductor layer to form a gate electrode that includes a first portion and a second portion, wherein the first portion includes a portion of the first doped region, and the second region includes a portion of the semiconductor layer outside of ...