In this paper, we describe a JPHEMT with a p-type capping layer from the gate to source/drain regions for improving the off-state characteristics. The device parameters of the p-layer are optimized using device simulation technology to enhance the off-state characteristics. It has been ...
US6974969 * Nov 3, 2003 Dec 13, 2005 The University Of Connecticut P-type quantum-well-base bipolar transistor device employing interdigitated base and emitter formed with a capping layerUS6974969 Nov 3, 2003 Dec 13, 2005 The University Of Connecticut P-type quantum-well-base bipolar ...
A first capping layer of titanium nitride prevents the formation of a cobalt/titanium intermetallic. A subsequently formed titanium metallic layer gett... PR Besser,RW Cheung,R Chen - US 被引量: 85发表: 1999年 Improvement of Er-silicide formation on Si(100) by W capping Pinhole or pyramidal...
Bitline of semiconductor device having stud type capping layer and method for fabricating the sameA semiconductor device with a bitline structure has a stud type capping layer. A method of fabricating the same achieves sufficient process margins and reduces parasitic capacitance....
(JPHEMT) is widely used for RF switches in wireless communications. In this paper, we offer a JPHEMT with a p-type capping layer from a gate region to source/drain regions for decreasing off-capacitance (C off ). The device parameters of the p-layer are optimized using device simulation...
We systematically study the influence of group V intermixing on the structural and optical properties of type II GaSb/GaAs quantum dots (QDs) capped by selected capping layers. Compared to GaSb QDs capped directly by a GaAs layer, we observe a strong enhancement of photoluminescence (PL) intensit...
(TS), in comparison to the no capping layer (NC) control, on the composition, structure, and function of bacterial communities in the Pinus banksiana rhizosphere and bulk soil in the peat-mineral mix (PMM, the cover soil) in a 2-year column study simulating soil reconstruction in land ...
For example, varying the capping layer thickness allows for a fine tuning of the splitting energy. The effect is explained by a strong sensitivity of the hole wave function to the morphology of the structure and a mutual compensation of the electron and hole anisotropies. The oscillator strength...
Impact of Tungsten Capping Layer on Yttrium Silicide for Low-Resistance n+-Source/Drain Contacts In order to form a stable silicide having a low Schottky barrier height (SBH) for electrons, we employed a tungsten (W) capping layer on yttrium (Y) and in... T Isogai,H Tanaka,T Goto,.....
A capping layer318, such as a silicon layer, may be deposited over the planarized substrate. For example, the capping layer318can be epitaxially grown using chemical vapor deposition (CVD), low pressure CVD (LPCVD), atomic layer CVD (ALCVD), ultrahigh vacuum CVD (UHVCVD), reduced pressure...