A semiconductor apparatus that includes two types of transistors is disclosed. A first semiconductor chip includes the first semiconductor device of a transistor type of GaAs-HEMT, while, a second semiconductor chip includes a second semiconductor device of a transistor type GaN-HEMT. The second ...
bit processor but also switching to a CMOS implementation. I've been reverse-engineering parts of the 386 chip and came across two interesting and completely different circuits that the 386 uses to implement an XOR gate: one uses standard-cell logic while the other uses pass-transistor logic. ...
Resonant reversal of the current takes place after which the amplifier again takes control. During the flyback the base of transistor 41 is discharged through transistor 22 and is subsequently held cut-off by the - 100V. supply diode, diode 37 becoming non-conducting and a further conduction ...
A method and structure for a read only memory (ROM) cell array has the first drain of a first transistor connected to a true bitline and a second drain of a second transistor connected to a complement bitline. The first transistor also includes a first source, and the second transistor in...
Energy band engineering is an important strategy to modulate the properties of 2D TMDCs. In this contribution, we highlight the recent progress in the energy band engineering of 2D TMDCs based on two aspects: Intrinsic and extrinsic modulations. The energy band engineering strategies mainly include ...
In the present invention, there is provided an optical proximity correction method including steps of: extracting a gate length distribution of a gate from a pattern shape of the gate of a transistor to be formed on a wafer; calculating ... K Koike,K Nakayama - US 被引量: 10发表: 2008...
陳詩蕙,Shihhui Chen - 《電機資訊學院 - College of Electrical Engineering\\s&\\scomputer》 被引量: 0发表: 2002年 Seismic imaging using omni-azimuth seismic energy sources and directional sensing Methods of forming field effect transistors and related field effect transistor constructions are described...
G. Pfann, its development being ‘driven’ by the demands of the newly invented transistor for homogeneous and ultra-pure metals (e.g. Si, Ge). The method takes advantage of non-equilibrium effects associated with the ‘pasty’ zone separating the liquidus and solidus of impure metal. ...
stored information if the two pieces of stored information are the same, wherein,each of the two identical memory cell arrays comprises a memory cell with four transistors, wherein the memory cell has a cell structure comprising: a first N-type transistor (N1), a first P-type transistor (...
A NOR gate includes is constructed with two asymmetric FinFET type transistors instead of the conventional four-transistor NOR gate. The reduction in the number of tran