A datum is stored in a memory by placing a memory cell in a first state that is indicative of the datum, and later placing the same or a different cell in a second state that is indicative of the same datum. If a different cell is placed in the second state, both cells are ...
A semiconductor memory device includes a memory cell array, first bit lines, second bit lines, a first precharge circuit, a sense amplifier, and a read control circuit. The memory cell array has a first cell array including first memory cells arranged in a matrix and a second cell array in...
Data-driven computing is highly dependent on memory performance. Flash memory is presently the dominant non-volatile memory technology but suffers from limitations in terms of speed. Two-dimensional (2D) materials could potentially be used to create ultrafast flash memory. However, due to interface ...
A datum is stored in a memory by placing a memory cell in a first state that is indicative of the datum, and later placing the same or a different cell in a second state that is indicative of the same
As the prevailing non-volatile memory (NVM), flash memory offers mass data storage at high integration density and low cost. However, due to the ‘speed-retention-endurance’ dilemma, their typical speed is limited to ~microseconds to milliseconds for pr
A 2-bit FinFET flash memory cell capable of storing 2 bits and a method of forming the same are provided. The memory cell includes a semiconductor fin on a top surface of a substrate, a gate insulation film on the top surface and sidewalls of a channel section of the semiconductor fin...
A memory system made up of electrically programmable read only memory (EPROM) or flash electrically erasable and programmable read only memory (EEPROM) cells. An intelligent programming technique allows each memory cell to store more than the usual one bit of information. More than one bit is sto...
Semiconducter manufacturer Micron has agreed to a deal that will see it acquire Intel's stake in two wafer factories for approximately $600 million. The two companies have been working together on producing NAND flash memory since 2006 with the IM flash Technologies partnership, and the announcemen...
Absolute screen coordinates of WPF user control Accesing mainwindiow controls from other class in WPF access a named xaml element in c# from a window added as a resource. Access a resource of a ControlTemplate in Code-Behind Access from usercontrol to Window listview item MVVM Access Property ...
Fabrication method for a two-bit flash memory cellA method for fabricating a two-bit flash memory cell is described in which a substrate with a trench formed therein is provided. A conformal tunnel oxide layer is then formed on the substrate, followed by forming polysilicon spacers on the ...