"Scanning tunneling microscopy of single-layer MoS2 in water and butanol." Ultramicroscopy 42 (1992): 630-636.Qin, X. R.; Yang, D.; Frindt, R. F.; Irwin, J. C. Scanning Tunneling Microscopy of Single-Layer MoS2 in Water and Butanol. Ultramicroscopy 1992, 44A42, 630-636....
High-performance MoS2 transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS2. Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced ...
triboelectric properties of single-layer MoS2, so that the results can lay the foundation for its applications in triboelectric nanodevices. In this work, high-quality 2D MoS2films were synthesized by chemical vapor deposition (CVD) method. The concept of tunneling triboelectrification was introduced ...
Morpurgo group from the University of Geneva [91] and the Wang group of the Chinese Academy of Sciences [92] used hBN and MoS2 as non-magnetic dielectric layers, respectively, and 2D ferromagnetic conductor Fe3GeTe2 as the magnetic layer to fabricate spin valve devices. In the process of ...
Based on our results, electronic structures of atomic layer MoS2 can be tuned by different substrates, and the selected bandgap and work function are different using different substrates. The presence of tip-induced band bending has been confirmed to contribute to the measured bandgap and work ...