Tungsten-doped indium oxide (IWO) grown by radio-frequency sputtering is a promising solution to meet all the above-mentioned requirements. In this work we show how a simple non-reactive room-temperature radio-
Transparent indium oxide and molybdenum, titanium, chromium, tungsten, and/or nickel laminatedoi:US4859036 AA device plate is provided which comprises a transparent conductive film comprised of indium oxide, and laminated thereon a metallic conductive film comprised of at least one metal selected from...
Carmalt1 & Ivan P. Parkin1 Tungsten doped titanium dioxide films with both transparent conducting oxide (TCO) and photocatalytic properties were produced via aerosol-assisted chemical vapor deposition of titanium ethoxide and dopant concentrations of tungsten ethoxide at 500 oC from a ...
oxide phase near 531 eV increases as the annealing temperature increases beyond 300 °C (Fig.2(b))33. The XPS survey scan of the MoO3-doped WO3film (Fig.2(c)) shows additional peaks that are related to Mo 3d and Mo 3p. The XPS peak positions of Mo 3d3/2and Mo 3d1/2are ...
Al2O3 doped ZnO (AZO), IZO (Indium Zinc Oxide, 90 wt% In2O3 / 10 wt% ZnO), In2O3/CaO ICO, Li2O/ZnO LZO, Ga2O3 doped ZnO (GZO), IGZO, ZnO2/TiO2, ZnO2/ZrO2, ZnO/LiCl, La0.67Sr0.33MnO3 (LSMO), ZrO2-Y2O3 stabilized (YSZ), SnO2, Sb2O3 doped SnO2 (ATO), SnO2/F...
图6 N-doped WO3@CL@CMF复合薄膜作为锂离子电池负极的电化学性能 8.Engineering layered/spinel heterostructure via molybdenum doping towards highly stable Li-rich cathode 钼掺杂构筑高稳定层状/尖晶石异质结构富锂锰基正极材料 Kun-Qi Geng, Meng-Qian Yang, Jun-Xia Meng*, Ling-Fei Zhou, Yu-Qin Wang,...
The columnar growth angle-dependent tungsten oxide (WO3) thin films were grown by using the Glancing angle sputter deposition (GLAD) technique with varying different substrate angles (00, 700, 750, and 800) on Fluorine-doped tin oxide (FTO) and Corning glass (CG) corning glass substrates at ...
Blue tungsten oxide nanostructures with optimum surface and bulk oxygen vacancies (OV-B) remained a concern, requiring specific growth conditions and equip
substrates 11 and 14 are preferably polished and cleaned to enhance adhesion of contact layers. Among suitable transparent contact materials are doped semiconducting tin oxide and indium tin oxide which may conveniently be deposited by sputtering. Contact layers may also be made by depositing thin lay...
Chromium, which has good ohmic contact properties with an ITO (indium tin oxide) and amorphous silicon, is generally used as the data line, despite its higher resistivity than aluminum. However, the strong adhesion of the chromium layer to the photoresist layer creates a chromium layer ...