Sanquer, O. Faynot, Scaling of Trigate nanowire (NW) MOSFETs to sub-7 nm width: 300 K transition to Single Electron Transistor", Solid-State Electronics, Vol. 84, pp. 179-184 (2013)V. Deshpande et al., "Scaling of trigate nanowire (NW) MOSFETs to sub-7 nm width: 300 K ...
The Summit will take place at the Doubletree hotel in San Jose, California. Mr. Gitlin will participate in the Ethernet Chipsets session (1-103), an executive panel discussion focusing on the latest advances in Ethernet technology, particularly in 40/100 GbE. The session starts at 3:10pm on...
SAN FRANCISCO – As expected, Intel Corp. Wednesday (May 4) rolled out its 22-nm process—with a twist. The chip giant introduced the process, based on its long-awaited 3-D transistor design, dubbed tri-gate. Firstdisclosed by Intel in 2002,the tri-gate transistor will form the basis ...
2010 IEEE International Electron Devices Meeting: IEDM 2010, San Francisco, California, USA, 6-8 December 2010M. Saitoh, Y. Nakabayashi, K. Ota, K. Uchida, and T. Numata, "Understand- ing of short-channel mobility in tri-gate nanowire MOSFETs and enhanced stress memorization technique for ...
C. Auth, 22-nm fully-depleted tri-gate CMOS transistors, in: IEEE Custom Inte- grated Circuits Conference, San Jose, CA, 2012, p. 1.C. Auth, "22-nm Fully-Depleted Tri-gate CMOS Transistors," in Proceedings of the Custom Integrated Circuits Conference, ser. CICC. Washington, DC, USA:...