Najib MQ, Ganji JL, Pierce CN, Arabia FA, Chaliki HP. Transoesophageal echocardiographic Doppler colour flow patterns of a normally functioning third‑generation centrifugal left ventricular assist device. Eur Heart J Cardiovasc Imaging 2012;13:362‑3....
DATA TRANSCEIVING DEVICE CAPABLE OF NORMALLY TRANSCEIVING MASSIVE DATA IN A COMMUNICATION SYSTEM, AND A METHOD THEREOFPURPOSE: A data transceiving device and a method thereof are provided to safely transmit and receive data by constructing a frame in a new frequency band.;CONSTITUTION: A ...
Najib MQ, Ganji JL, Pierce CN, Arabia FA, Chaliki HP. Transoesophageal echocardiographic Doppler colour flow patterns of a normally functioning third‑generation centrifugal left ventricular assist device. Eur Heart J Cardiovasc Imaging 2012;13:362‑3....
Effects of p-GaN gate structures and fabrication process on performances of normally-off AlGaN/GaN high electron mobility transistorsdoi:10.7567/1347-4065/ab43b7Takaaki KondoYoshihiko AkazawaNaotaka IwataIOP Publishing
A normally-off power field-effect transistor semiconductor structure is provided. The structure includes a channel, a source electrode, a gate electrode and trapped charges which arranged between the gate electrode and the channel such that the channel is in an off-state when the source electrode...
The method involves appending patient specific information to a data record containing normally transmitted information at a third party computer (100) and transmitting the data record between the third party computer and the pharmacy computer (200) during a pharmacy transaction. The data record is ...
Solid product containing normally liquid hydrocarbon and normally solid trans-diene polymerWILDER CHARLES R.
Process for packaging, in a frozen state, normally liquid or viscous foods, characterized in that two opposite sides thereof are reciprocally parallel and each of said sides has a plurality of mutually parallel grooves, the grooves of a surface extending in transversal direction to the grooves of...
At gate doping of N gate = 5 x 10 17 cm -3 , the breakdo wn voltage of 14 kV is obtained with leakage current of 2.1 x 10 -7 A. Moreover, the simulation results indicate that with a gate doping of N gate = 1 x 10 18 cm -3 , the breakdown voltage of SiC VJFET is ...
A process for stabilizing organic materials normally subjected to deterioration, characterized in that it comprises the incorporation therein of an amount of stabilizer of an ester containing an alkylhydroxyphenyl group of the formula I ** (See formula) ** wherein R1 and R2 are each, independently...