and therefore serves to address the limitations of direct synthesis methods. By this method, great achievements have been made in TMCs synthesis and property modulation. For example, to achieve TMC materials with desired electronic
Precise control from the bottom-up for realizing tunable functionality is of utmost importance to facilitate the development of molecular electronic devices. Until now, however, manipulating charge carriers over single-molecule scale remains intractable.
4 Coaxing correlated materials to the proximity of the insulator–metal transition region, where electronic wavefunctions transform from localized to itinerant, is currently the subject of intensive research because of the hopes it raises for technological applications and also for its fundamental ...
Wave functions and spectra of charge carriers in a toroidal nanostructure: The transition from ring to bulk statesToroidal quantum dotToroidal nanostructuresA basis set expansion is employed to calculate spectra and eigenstates of charge carriers within a toroidal volume characterized by major radius R ...
Transition metal oxides have the advantages of abundant reserves, easy large-scale preparation, and low cost. Their ORR and OER properties can be modulated by various strategies, such as electronic structure modulation, defect engineering, and integration of appropriate carriers. The relationship between...
The monolayer thickness is con-stant, and the scale of the variations of the electrostaticpotential profile perpendicular to the plane is only lim-ited by the extent of the electronic wavefunctions. Hence,TMD can in principle be considered immune to channelthickness modulation close to the drain....
conducting carriers below the phase transition. We elaborate that the transition is not driven by the density wave type instability but caused by the crystal field effect whichfurther splits/separates the energy levels of Te (p x , p y ) andTe p z bands. T ransition metal dichalcogenides ...
Free charge carriers in MoSe2 can interact with X0 by introducing additional scattering, which leads to the broadening of X0 (refs. 20,21). The features I, II and IV are defined in the same way as in Fig. 2. Along the nt:nb = 1:1 and 4:1 features (I and II), we observe ...
(Fig.1b). WhenVTGis decreased, the overall scattering is reduced due to the decrease of carriers distributed close to the interface, giving rise to an increase of mobility forVTG > 0.6 V in Fig.1d(Below 0.6 V in Fig.1d, localization behaviour appears at low carrier density,...
Pompa, M., Turtù, S., Bianconi, A., Campanella, F., Flank, A.M., Lagarde, P., Li, C., Pettiti, I., Udron, D.: Coupling between the charge carriers and lattice distortions via modulation of the orbital angular momentum of the 3d holes by polarized xas spectroscopy. Physica C:...