Influence of BJT Transit Frequency Limit Relation to MOSFET Parameters on the Switching Speed of BiCMOS Digital Circuitsdoi:10.1155/1999/52841Ashok SrivastavaHindawi
Analytical model for the transconductance, cut off frequency, transit time and fringing capacitance of LDD MOSFETs is presented with a simple approach. The analysis is carried out considering the LDD device as a conventional MOSFET with a series resistance [Z.-H. Liu et al., Threshold voltage ...
Demonstration of velocity and energy conservation equations; Influence of transit-time effects on the noise spectrum; Prediction of a minimum noise measure at the frequency of 250 gigahertz.年份: 1996 收藏 引用 批量引用 报错 分享 全部来源 求助全文 EBSCO 相似文献Transit-time effect on electronic ...
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1.Its modulation rate is 32MHz and work frequency is 180MHz andCross timeis 15ns.利用铌酸锂晶体为压电换能器,熔石英为声光互作用介质,研制出调制速度为32MHz、工作频率为180MHz、渡越时间为15ns、用于RGB彩色合成中的的声光调制器,文中主要讨论和分析了Q参数与调制器中心工作频率、换能器长度的关系;讨论...
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Frequency - Max standard Current - Output High, Low standard Current - On State (It (RMS)) (Max) standard Current Transfer Ratio (Max) standard Description MIC4604YM Current - Leakage (IS(off)) (Max) standard Output Type standard FET Type standard Current - Peak Output standard Power - ...
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Additionally, the rule driven decision module may further be configured to adopt and infer rules in an adaptive manner based on the occurrence frequency of emerging patterns and or feedback from registered parties. Thus, in some examples, the rule driven decision module may further filter traffic ...
Analytical model for the transconductance, cut off frequency, transit time and fringing capacitance of LDD MOSFETs is presented with a simple approach. The analysis is carried out considering the LDD device as a conventional MOSFET with a series resistance [Z.-H. Liu et al., Threshold voltage ...