The transistor was invented in 1947 first in the form of a point contact transistor, whose emitter and collector were formed by sharp metal wires on a germanium block as base [Bar49, Sho49]. Soon it was clear that the metal semiconductor junctions at the point contacts can be replaced by...
These vacuum tube triodes were significantly larger than a transistor and required considerably more power to operate. They aren’t “solid-state” components, unlike transistors, meaning that they can fail during normal operation because they rely on the movement of electrons flowing within the tube...
Then stretchable OECT-based DA sensors on PDMS substrates were fabricated. Such sensors showed a detection limit of 61 nM, paving the way for the development of flexible DA sensors. Furthermore, a supramolecular method based on the integration of PEDOT:PSS with cationic molecular blocks for ...
Even though invented by Wrighton et al. in the mid-1980s33, only in recent years, OECTs have become the research highlight in the realm of sensing for biomolecules and have made significant advancements for various biomolecules with high current sensitivity (SI). Previous reviews on OECTs focu...
(grid negative and cathode positive) would diminish conductivity through the tube while a voltage of the other polarity (grid positive and cathode negative) would enhance conductivity. I find it curious that one of the later transistor designs invented exhibits the same basic properties of the very...
Once the transistor cat was let out of the bag, vacuum tubes were on their way to extinction in all but the most specific of applications. Transistors are much more durable (vacuum tubes, like light bulbs, will eventually need to be replaced), much smaller (imagine fitting 2 billion tubes...
that ended up as heat which shortened the life of the tube itself. To overcome these problems, John Bardeen, Walter Brattain, and William Shockley were invented a transistor at Bell Labs in the year of 1947. This new device was a much more elegant solution to overcome many of the fundament...
have been invented. Concurrently, conventional large-area technologies are being adapted to permit processing on plastic substrates with minimal performance loss2,13. Despite these continuing improvements, the architecture of the fundamental building-block used for LAE, the thin-film field-effect transist...
The invented ink-jet printing method for the construction of thin film transistors using all SWNTs on flexible plastic films is a new process. This method is more practical than all
“thin” it down during the growth of the dielectric to obtain the low leakage current. The SiO2 film typically consumes poly-Si thickness equivalent to ˜54% of the dielectric thickness. In other words, if a 500 Å of thermal SiO2 were grown, 250 Å of poly-Si film would be ...