Field-effect transistors based on two-dimensional (2D) materials have the potential to be used in very large-scale integration (VLSI) technology, but whether they can be used at the front end of line or at the back end of line through monolithic or heterogeneous integration remains to be det...
+ Hardware design and software development for MIL-SPEC power conversion and UPS, GaN transistors based on gallium nitride, efficient IGBT and MOSFET transistors, etc. Videos Why Infineon GaN? Share We use both our own and third-party cookies to enable the correct functioning of our services ...
Transistors are a key component to many amplifying circuits. There are a seemingly infinite variety of transistor amplifiers out there, but fortunately a lot of them are based on some of these more primitive circuits. Remember these circuits, and, hopefully, with a bit of pattern-matching, you ...
Here we report radiofrequency transistors based on high-purity carbon nanotube arrays that are fabricated using a double-dispersion sorting and binary liquid interface aligning process. The nanotube arrays exhibit a density of approximately 120 nanotubes per micrometre, a maximum carrier mobility of 1...
Compared to the monomer compound 2‐phenyl[1]benzothieno[3,2‐ b ][1]benzothiophene (Ph‐BTBT, μ max =3.4×10 2 cm 2 V 1 s 1 ), the organic thin‐film transistors (OTFTs) based on BTBT‐Ph‐BTBT and BTBT‐DPh‐BTBT showed significantly higher mobility (up to 2.5 and 3.6cm 2 ...
KEWAZO teamed up with Infineon to develop the world’s first on-site construction robot. The KEWAZO scaffolding robot eliminates personal safety risks, realizes significant savings on labor costs and accelerates assembly by 40% or more. Storing solar energy at home - Long ...
1) ALU (Arithmetic Logic Unit) ALU is the core of the arithmetic unit. It is based on a full adder, supplemented by a circuit composed of a shift register and corresponding control logic. Under the action of the control signal, it can complete four operations of addition, subtraction, mult...
Here, it is demonstrated that the phototransistors based on CsPbBr3 microplates show anomalous ambipolar transport characteristics at room temperature. The hole mobility shows light dependence, while the electron mobility is identical under various light incidence. The hole mobility increases from 0.02 cm...
Tunnel field-effect transistors (TFETs) are regarded as successors of metal-oxide semiconductor field-effect transistors (MOSFETs), but silicon-based TFETs typically suffer from low on-currents, a drawback related to the large resistance of the tunnel barrier. To achieve higher on-currents an elo...
We have reported the development of multimode transistors based on ion-dynamic capacitance. This capacitance could be described by a compact theory validated by numerical simulations. This showed that the characteristics of tunable synaptic weight, high apparent mobility, sharp subthreshold swing and memr...