FET,field-effect transistor- a transistor in which most current flows in a channel whose effective resistance can be controlled by a transverse electric field p-n-p transistor- a junction transistor having an n-type semiconductor between a p-type semiconductor that serves as an emitter and a p...
Transistor CRMICRO CS80N07A4, 12V-300V, NMOS, MOSFET de potencia de Canal N, TO-252, 70V, 80A, 6.5mR, puede obtener más detalles sobre Transistor CRMICRO CS80N07A4, 12V-300V, NMOS, MOSFET de potencia de Canal N, TO-252, 70V, 80A, 6.5mR desde el sitio m
The invention relates to an integrated circuit, including a semiconductor substrate (12) and a junction field effect transistor formed in the substrate (12) -Drainage area (14) and source area (15), -Canal District (17), -The grid area (... JM Jean 被引量: 0发表: 2021年 Integration ...
N-type substrate (1) between the PN movable (11) of planartechnik FET in training and one P(4) is created in the low-resistance direction of sperrichtung prestressing force voltages in the Canal Zones dotierter. The PN transition (11) of curvature be in substrate (1) in a feldst ...
Here we demonstrate an active field-effect control of super- conductivity in a strained FET with an organic Mott insulator, k-(BEDT-TTF)2Cu[N(CN)2]Br (k-Br), whose ground state is tuned in the vicinity of a strain-induced Mott transition. This device provides a novel three-terminal ...