Each coil may have segments that in turn are formed on a corresponding metal layer of the semiconductor die. The segments of a given coil are coupled to each other, and the first and second coils can be interdigitated with each other....
<div p-id="p-0001">A transformer and a structure thereof and a power amplifier are provided. The transformer includes a first inductor to a fourth inductor, a first capacitor, and a second capacitor.
图10.(a)三层叠层FET powercell版图;(b)powercell厚金属连接方式 图11. (a)差分三层叠层 FET powercell版图;(b)带Linter和源极互联电感的powercell版图 图10所示为三层堆叠结构的FET结构powercell版图。三层厚金属用于底部和中间堆叠FET之间的漏源连接。在EMX中仿真了相应的连接,以提取寄生电感对堆叠FET PA性能...
Design and Optimization of a Class-E Amplifier for a Loosely Coupled Planar Wireless Power System In wireless power systems for charging battery-operated devices, the selection of component values guaranteeing certain desired performance characteristics... JJ Casanova,NL Zhen,J Lin - 《IEEE Transactions...
A transformer-combined fully integrated outphasing class-D PA in 45 nm LP CMOS achieves 31.5 dBm peak output power at 2.4 GHz with 27% peak PAE, and supports over 86 dB of output power range. The PA employs dynamic power control (DPC) whereby sections of the PA are turned on or off ...
A switchable inter-stage matching circuit (234) is coupled between the output... C Jose 被引量: 0发表: 2010年 Audio Power Amplifier Operation with Transformer Load A product with a Class-D audio power amplifier (APA) driving an output transformer with inadequatelow-frequency performance may ...
Voltage signals amplified in this way are not constrained by local supply voltages, so the amplifier’s rated current rather than its voltage swing usually limits the power delivered to the load. Amplifiers with high output current drive are therefore appropriate for transformer-coupled systems. ...
coupled to the cathode of the common grid stage, leading the stage to be known as a cathode-coupled amplifier[6]. The cathode-coupled amplifier is direct coupled to an optimised White cathode follower output stage[7]. User-adjustable global feedback to suit the particular headphone in use ...
3.37 GHz class-F-1 power amplifier with 77% PAE in GaN HEMT technology In this paper, the design and implementation of a class-F power amplifier (PA) operating at 3.37 GHz in a GaN Hetrojunction Electron Mobility Transistor (H... Kalim,Pozdniakov,Dimitry,... 被引量: 0发表: 0年 Brad...
A 1.8-GHz CMOS power amplifier for a polar transmitter is implemented with a 0.18-$mu{hbox {m}}$ RF CMOS process. The matching components, including the input and output transformers, were integrated. A dual-primary transformer is proposed in order to increase the efficiency in the low power...