(5) TDI R224R224 39_439_4 TMS C11 SIGNALSSIGNALS TMS R230R230 680_4680_4 TRST# B13 D25 TRST# DBI0# HDBI0# (5) HCLK_ITP A16 J26 T91T91 HCLK_ITP# A15 ITP_CLK0 DBI1# T24 HDBI1# (5) T90T90 R219R219 56_456_4 PREQ# B10 ITP_CLK1 DBI2# AD20 HDBI2# (5) PREQ# DBI...
< > 马可会员 蓝翔科技实业有限公司 身份验证: 经营模式:贸易型 注册资本: 企业类型: 公司地区:中国 主营产品:工业显示屏 进入店铺 产品分类 LCD系列产品 产品详情 型号:TLX-1621C-3M2 TLX-1741-C3B 品牌:TOSHIBA/东芝 供应商信息 王生 地址: 中国 广东 广州 黄石花园 ...
216VC62a 332OO4512300G 333102170000A 3721 3ASC25H204 3BDH000741R1 3BHB003688R0101 3BHB003689 3BHB005171R0101 3BHB005243R0105 3BHB005243R0106 3BHB013088R0001 3BHE019633R0101 3BHE029153R0101 3BHL000986P7000 3BSE008538R1 3HAB8101-8/08Y 3HAB8859-1/03A 3HAC025466-001 3HAC031683-001 ...
型号:TX26D61VC1CAA 品牌:TOSHIBA/东芝 显示颜色:单色 类型:LCD液晶屏 用途:通用 <P><SPAN style="FONT-SIZE: 12pt; FONT-WEIGHT: bold; COLOR: #ff0000"> <P style="TEXT-ALIGN: left"><SPAN style="FONT-SIZE: 12pt; FONT-WEIGHT: bold; COLOR: #ff0000"> </SPAN><SPAN style="FONT-SIZE:...
东芝笔记本电路图toshibanb7toshiba nb7tz系列.pdf,1 2 3 4 5 6 7 8 PCB STACK UP LAYER 1 : TOP TZ1 Block Diagram LAYER 2 : GND1 LAYER 3 : IN1 LAYER 4 : VCC A LAYER 5 : IN2 PENRYN A USB-3 LAYER 6 : IN3 478P uFCPGA LCD/CCD Con. P19 LAYER 7 : GND2 FSB P3,4 T LA
C11 V 50 V CC CC G12 1A3 1A4 49 1B3 48 1B4 47 1B5 46 GND 45 1B6 44 1B7 43 1B8 42 2B1 41 2B2 40 2B3 39 GND 38 2B4 37 2B5 36 2B6 52 > 1 4 3D 1 1B1 5 1A1 1 4 1 > 5D 6 6 1A5 10 GND 11 1A6 12 1A7 13 1...
REF610C11LCLRGOP2D674A906U01PFCL201C 10KNTU8103HAB8101-18/09AKUC755AE105 3BHB005243R0105KUC755AE1053BHB005243R0105086318-002086318-5015SHY4045L0004FI820FPM864PM864A20.5*15.5*8.73AUA00001104295SGX1060H0003800PP846APE1315A81EU01H-EGJR2391500R1210/GJR2391511R42GJR2391511R4207KR51 220V...
PEC11L-4015F-N0015 PEC11L-4015F-N0020 FT232RNQ-REEL AG6201-MAQ MCIMX6Y2CVK08AB RTL8153-VC-CG FT232RNL-REEL T6703-5K MAX-M10S-00B UBX-M8230-CT NEO-M9N-00B UBX-7020-KT ALC897-VA2-CG FT232RL RTL9603C-VD6-CG LLCC68IMLTRT RTL8125BG-CG TSW14J57EVM...
The threshold voltage of the memory cell transistor MT in the “B” state is equal to or higher than the voltage VB and lower than a voltage VC (>VB). The threshold voltage of the memory cell transistor MT in the “C” state is equal to or higher than the voltage VC and lower ...
a charge-pump circuit 48 of FIG. 4 may be employed to generate as the control signal φ1 a higher voltage than the power supply voltage Vcc. Circuit 48 includes carrier-storage capacitors C11 and C12, an N-channel MOSFET Q15 for timely driving the charge operation of capacitor C11, and ...