A multi scaling time-of-flight (TOF) detecting system with a large area micro channel plate (MCP) detector was installed to obtain high counting rate and enhanced mass resolution. TOF-RBS spectra obtained using He +, Be +, Si + and Ar + probes for 5 and 10 nm thick Au deposited on ...
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time of flight spectra/ medium energy ion-nanoprobeTOF-RBSsemiconductor process analysisscattering cross sectionlateral resolutionRutherford backscattering spectroscopy100–200 keV Be and Si ion beams from an ion-nanoprobe have been used to provide good lateral resolution and enhanced scattering cross ...
Medium energy ion-nanoprobe with TOF-RBS for semiconductor process analysis.Focused ion beamIBARBSSiTOF100–200 keV Be and Si ion beams from an ion-nanoprobe have been used to provide good lateral resolution and enhanced scattering cross section in Rutherford backscattering spectroscopy. A time-of-...
The time resolutions of TOF-RBS using 150 keV Be~+ for Au/Si sample with SEDs with and without a shield were 5.6-9.2 and 4.4 ns, respectively. The improved time resolution for SEDs without the shield was confirmed experimentally.Satoshi Abo...
TOF-RBSprotonsProtons and He ions of 100 keV were scanned across a slit system by rapidly changing electric fields, whereby a small fraction of the incident ions passed the system forming short ion pulses. The energy shift and energy spread created by the electric fields as well as the ...
The time resolutions of TOF-RBS using 150 keV Be + for Au/Si sample with SEDs with and without a shield were 5.6–9.2 and 4.4 ns, respectively. The improved time resolution for SEDs without the shield was confirmed experimentally.
A single-layer nanostructure with Au stripes on a Si substrate was resolved by TOF-RBS measurement within a short time of 256s. The spatial resolution, measured by the edge of the Au stripes, was 42nm. Another single-layer nanostructure with Pt stripes fabricated by electron beam (EB) ...